Porous waveguide sensors featuring high confinement factors and method for making the same
Devices and methods of providing a high-performance optical sensor disclose a sensor comprised of a porous material designed to have a multilayer rib-type or multilayer pillar-type waveguide geometry. The resulting porous nanomaterial multilayer-rib or multilayer-pillar waveguide design is optically capable of achieving ˜100% confinement factor while maintaining small mode area and single-mode character. Fabrication of the device is enabled by an inverse processing technique, wherein silicon wafers are first patterned and etched through well-established techniques, which allows porous nanomaterial synthesis (i.e., porous silicon anodization) either at the wafer-scale or at the chip-scale after wafer dicing. While ˜100% is an optimal target, typical devices per presently disclosed subject matter may operate with ˜98-99+%, while allowing for some design adjustments to be made if necessary, and still maintaining high sensitivity. i.e., >85-90% confinement suitable in some applications. In those instances, a primary benefit would still be use of the presently disclosed fabrication technology.
1. A high sensitivity optical sensor operating on interferometric resolution, comprising:
an optical waveguide having at least a first porous medium, and a second porous medium with lower refractive index than the first porous medium;
wherein the first porous medium serves as both a high index waveguide core and as a primary active sensing medium,
the second porous medium serves as a cladding, and
the waveguide cross-section comprises a waveguide rib or a waveguide pillar structured in at least two transverse dimensions, so that light propagates longitudinally in a direction orthogonal to the transverse plane of the waveguide; and
wherein the transverse design of the waveguide achieves a confinement factor of greater than 80% within the first porous medium.
2. A sensor as in claim 1 , wherein:
said waveguide comprises a nanomaterial; and
said first porous medium comprises porous nanomaterials.
3. A sensor as in claim 2 , wherein said porous nanomaterials comprise at least one of porous silicon (pSi), porous silica (pSiO 2 ), porous alumina (pAl 2 O 3 ), porous titania, and nanoporous gold (npAu).
4. A sensor as in claim 2 , wherein said waveguide comprises a pre-patterned shape comprising one of a micro or nanostructure shape.
5. A sensor as in claim 4 , wherein:
said waveguide comprises a bulk silicon wafer; and
said first porous medium comprises a first layer of an anodized thin high current density low index porous silica film conformally wrapped to the waveguide active sensing surface for harvesting 100% of the evanescent field;
said second porous medium comprises a second layer of a higher refractive index layer of porous silica or porous silicon and
said sensor further comprises a third layer of a low index layer of porous silica for optical biosensing such that said sensor comprises an integrated photonic device.
6. A sensor as in claim 5 , wherein said first and third layers have of a relatively high porosity of about 75% and said second layer has a relatively lower porosity of above about 50%.
7. A sensor as in claim 1 , wherein said first and second porous media comprise porous silicon having a tunable porosity with controlled average pore diameters in a range from less than 10 nm to over 100 nm.
8. A sensor as in claim 1 , wherein said active sensing medium has a resulting surface area of at least about 100 m 2 /cm 3 .
9. A sensor as in claim 1 , wherein said first and second porous media have tunable properties, including tunable average pore diameter, interpore spacing, and porosity.
10. A sensor as in claim 1 , wherein at least one of said first and second porous media comprise anodized porous silicon resulting in a porous nanomaterial multilayer waveguide geometry optically capable of achieving an over 90% confinement factor while maintaining single-mode character.
11. A sensor as in claim 1 , wherein said first and second porous media comprise porous silicon having tunable porosity in a range from 35% to 80% and which produce a refractive index ranging from 2.6 to 1.3 at optical wavelengths.
12. A sensor as in claim 1 , wherein said waveguide comprises a plurality of waveguide ribs having respective widths of about 750 nm and respective depths of about 500 to 550 nm.
13. A sensor as in claim 1 , wherein at the optical waveguide has an operating wavelength and polarization such that the waveguide supports only a single waveguide mode.
14. A sensor as in claim 13 , wherein the transverse design of the waveguide achieves a confinement factor of greater than 95% across all the porous media comprising the waveguide.
15. A sensor as in claim 13 , wherein the transverse design of the waveguide achieves a confinement factor in a range of 20% to 80% across the second porous medium.