Light emitting device having a stacked structure

1. A light emitting device comprising:

a first light emitting part including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer;

a second light emitting part disposed on a first surface of the first light emitting part, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer, the second n-type semiconductor layer having a first surface and a second surface opposing the first surface;

a third light emitting part disposed on a first surface of the second light emitting part, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer;

a first contact structure contacting the first surface of the second n-type semiconductor layer; and

a second contact structure contacting the second surface of the second n-type semiconductor layer, wherein:

the first contact structure extends into the first light emitting part to electrically contact the first n-type semiconductor layer; and

the second contact structure extends into the second light emitting part to electrically contact the third n-type semiconductor layer.

2. The light emitting device according to claim 1 , further comprising a third contact structure extending into the third light emitting part to electrically contact the third n-type semiconductor layer.

3. The light emitting device according to claim 2 , further comprising:

a common pad disposed at a first corner of the light emitting device, and electrically coupled with the first, second, and third n-type semiconductor layers;

a first pad disposed at a second corner of the light emitting device, and electrically coupled with the first p-type semiconductor layer;

a second pad disposed at a third corner of the light emitting device, and electrically coupled with the second p-type semiconductor layer; and

a third pad disposed at a fourth corner of the light emitting device, and electrically coupled with the third p-type semiconductor layer,

wherein the first, second, and third n-type semiconductor layers are electrically coupled with one another by the first to third contact structures.

4. The light emitting device according to claim 3 , wherein:

the second light emitting part has a mesa structure, such that a portion thereof in the second corner is removed; and

the third light emitting part has a mesa structure, such that portions thereof in the second and third corners are removed.

5. The light emitting device according to claim 1 , further comprising:

a first color filter surrounding an outer sidewall of the first contact structure, and extending onto the first p-type semiconductor layer;

a first adhesion layer surrounding an outer sidewall of the first color filter, and extending onto the first color filter;

a second color filter surrounding an outer sidewall of the second contact structure, and extending onto the second p-type semiconductor layer; and

a second adhesion layer surrounding an outer sidewall of the second color filter, and extending onto the second color filter.

6. The light emitting device according to claim 1 , further comprising a substrate disposed over a second surface of the first light emitting part opposing the first surface thereof.

7. The light emitting device according to claim 1 , further comprising:

a common pad disposed on the third light emitting part, and electrically coupling the first, second, and third n-type semiconductor layers;

a first pad disposed on the third light emitting part, and electrically coupled with the first p-type semiconductor layer;

a second pad disposed on the third light emitting part, and electrically coupled with the second p-type semiconductor layer; and

a third pad disposed on the third light emitting part, and electrically coupled with the third p-type semiconductor layer.