Semiconductor memory device having a charge accumulating layer including aluminum, oxygen, and nitrogen

1. A semiconductor memory device comprising:

a first electrode and a second electrode aligned in a first direction;

a first semiconductor layer provided between the first electrode and the second electrode, the first semiconductor layer facing the first electrode;

a second semiconductor layer provided between the first semiconductor layer and the second electrode, the second semiconductor layer facing the second electrode;

a first charge accumulating layer provided between the first electrode and the first semiconductor layer; and

a second charge accumulating layer provided between the second electrode and the second semiconductor layer,

at least one of the first charge accumulating layer and the second charge accumulating layer comprising:

a first region including aluminum and oxygen and having a first position as a position in a second direction, the second direction intersecting the first direction;

a second region including aluminum and oxygen and having a second position as a position in the second direction, the second position being different from the first position; and

a third region including aluminum and nitrogen and having a third position as a position in the second direction, the third position being between the first position and the second position, and

oxygen being not included in the third region or a concentration of oxygen in the third region being lower than concentrations of oxygen in the first region and the second region.

2. The semiconductor memory device according to claim 1 , wherein

the first region and the second region include at least one of aluminum oxide (AlO), aluminum oxynitride (AlON), aluminum silicon oxide (AlSiO), and aluminum silicon oxynitride (AlSiON).

3. The semiconductor memory device according to claim 1 , wherein

the third region includes at least one of aluminum nitride (AlN) and aluminum silicon nitride (AlSiN).

4. The semiconductor memory device according to claim 1 , wherein the first region and the second region have negative fixed charge.

5. The semiconductor memory device according to claim 1 , comprising:

a first insulating layer provided between the first charge accumulating layer and the first semiconductor layer; and

a third charge accumulating layer provided between the first charge accumulating layer and the first insulating layer and including nitrogen.

6. The semiconductor memory device according to claim 5 , wherein

the third charge accumulating layer includes at least one of silicon nitride (SiN), hafnium nitride (HfN), and zirconium nitride (ZrN).

7. The semiconductor memory device according to claim 1 , comprising:

a second insulating layer provided between the first charge accumulating layer and the first electrode; and

a fourth charge accumulating layer provided between the first charge accumulating layer and the second insulating layer and including nitrogen.

8. The semiconductor memory device according to claim 7 , wherein the fourth charge accumulating layer includes at least one of silicon nitride (SiN), hafnium nitride (HfN), and zirconium nitride (ZrN).

9. The semiconductor memory device according to claim 1 , wherein

the first charge accumulating layer and the second charge accumulating layer include the first region, the second region, and the third region respectively, and

referring to a distance in the first direction between the first region of the first charge accumulating layer and the first region of the second charge accumulating layer as a first distance,

referring to a distance in the first direction between the second region of the first charge accumulating layer and the second region of the second charge accumulating layer as a second distance, and

referring to a distance in the first direction between the third region of the first charge accumulating layer and the third region of the second charge accumulating layer as a third distance,

the first distance and the second distance are smaller than the third distance.

10. The semiconductor memory device according to claim 9 , comprising:

the first electrode extending in the second direction;

the second electrode extending in the second direction;

a third insulating layer provided between the first electrode and the second electrode and extending in the second direction;

the first semiconductor layer provided between the first electrode and the third insulating layer; and

the second semiconductor layer provided between the second electrode and the third insulating layer, wherein a surface of the third insulating layer on the first electrode side includes:

a first section and a second section aligned in the second direction and contacting the first electrode;

a third section provided between the first section and the second section and contacting the first semiconductor layer;

a fourth section provided between the first section and the third section and contacting the first region of the first charge accumulating layer; and

a fifth section provided between the second section and the third section and contacting the second region of the first charge accumulating layer.

11. The semiconductor memory device according to claim 9 , wherein

referring to a distance in the first direction between the first region of the first charge accumulating layer and the first region of the second charge accumulating layer as a fourth distance, and

referring to a distance in the first direction between the first semiconductor layer and the second semiconductor layer as a fifth distance,

the fourth distance is smaller than the fifth distance.

12. The semiconductor memory device according to claim 1 , comprising

a fourth insulating layer and a fifth insulating layer provided between the first electrode and the second electrode and aligned in the second direction, wherein

the first semiconductor layer and the second semiconductor layer are provided between the fourth insulating layer and the fifth insulating layer,

referring to a length in the first direction of the fourth insulating layer as a first length,

referring to a length in the first direction of the fifth insulating layer as a second length, and

referring to a distance in the first direction between a facing surface of the first electrode facing the first semiconductor layer and a facing surface of the second electrode facing the second semiconductor layer as a sixth distance,

the first length and the second length are larger than the sixth distance.

13. The semiconductor memory device according to claim 12 , wherein

the first charge accumulating layer and the second charge accumulating layer include the first region, the second region, and the third region respectively, and

the fourth insulating layer contacts the first region of the first charge accumulating layer and the first region of the second charge accumulating layer, and

the fifth insulating layer contacts the second region of the first charge accumulating layer and the second region of the second charge accumulating layer.

14. The semiconductor memory device according to claim 12 , wherein

referring to a length in the second direction of the first charge accumulating layer as a third length, and

referring to a length in the second direction of the first semiconductor layer as a fourth length,

the third length is larger than the fourth length.