IP Library Assignment 058738/0001
Patent Assignment
Reel/Frame 058738/0001

Change of Name

Recorded: 2022-01-14 Pages: 58
Assignor
TOSHIBA MEMORY CORPORATION
Executed: 2019-10-01
Assignee
KIOXIA CORPORATION
1-21, SHIBAURA 3-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Properties (22)
Semiconductor Memory Device
Application: 17/071,332 →
Publication: US US20210028185A1
Semiconductor Memory Device
Application: 17/223,202 →
Publication: US US20210225449A1
Semiconductor Memory Device, Memory System, and Defect Detection Method
Application: 16/562,771 →
Publication: US US20200258993A1
Semiconductor Memory Device Including a First Electrode to Input Command Set and Output Read Data and a Second Electrode to Supply Power
Application: 17/024,370 →
Publication: US US20210005272A1
Semiconductor Memory Device Having a Charge Accumulating Layer Including Aluminum, Oxygen, and Nitrogen
Application: 16/564,032 →
Publication: US US20200303382A1
Semiconductor Memory Device Incorporating Hafnium Oxide Insulative Portions
Application: 17/028,748 →
Publication: US US20210013229A1
Non-Volatile Semiconductor Memory Device Including Application of Different Voltages to Memory Cells Based on Their Proximity to a Selected Memory Cell
Patent: 50,025 →
Application: 17/004,584 →
Nonvolatile Semiconductor Memory Device
Application: 17/374,271 →
Publication: US US20210343337A1
Nonvolatile Semiconductor Memory Device
Application: 17/238,822 →
Publication: US US20210240345A1
Nonvolatile Semiconductor Memory Device
Application: 17/064,053 →
Publication: US US20210020249A1
Nonvolatile Semiconductor Memory Device
Application: 17/340,310 →
Publication: US US20210295925A1
Nonvolatile Semiconductor Memory Device Including a Memory Cell Array and a Control Circuit Applying a Reading Voltage
Application: 17/219,003 →
Publication: US US20210217481A1
Semiconductor Memory Device
Application: 16/875,259 →
Publication: US US20200279996A1
Semiconductor Memory Device with a Three-Dimensional Stacked Memory Cell Structure
Application: 17/398,654 →
Publication: US US20210375923A1
Non-Volatile Semiconductor Memory Device and Memory System
Application: 17/230,032 →
Publication: US US20210233590A1
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Application: 17/183,599 →
Publication: US US20210202263A1
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Application: 16/941,106 →
Publication: US US20200357808A1
Semiconductor Memory Device and Production Method Thereof
Application: 17/491,958 →
Publication: US US20220020769A1
Semiconductor Memory Device Including a Laminated Body with a Plurality of Semiconductor Layers
Application: 17/113,554 →
Publication: US US20210091116A1
Semiconductor Memory Device and Method of Manufacturing the Same
Application: 17/206,763 →
Publication: US US20210210508A1
Semiconductor Memory Device Having a Protective Layer Provided Between a Source Contact and a Spacer Insulating Layer
Application: 17/079,743 →
Publication: US US20210043652A1
Semiconductor Memory Device Including an Asymmetrical Memory Core Region
Application: 17/338,822 →
Publication: US US20210296340A1
Related Assignments (4)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 6, 2019
From: HARAGUCHI, SHINYA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 050291/0645 →
Assignment of Assignor's Interest Sep 9, 2019
From: TAKASHIMA, AKIRA; INO, TSUNEHIRO; SUKO, AYAKA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 050307/0132 →
Assignment of Assignor's Interest May 18, 2021
From: SAKUMA, HARUKA; MIYAGAWA, HIDENORI; FUJII, SHOSUKE; SAKUMA, KIWAMU
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 056278/0010 →
Merger and Change of Name Jan 14, 2022
From: TOSHIBA MEMORY CORPORATION; K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058737/0945 →