Patent Assignment
Reel/Frame 058737/0945
Merger and Change of Name
Recorded: 2022-01-14
Pages: 49
Assignee
TOSHIBA MEMORY CORPORATION
1-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Properties
(16)
Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Non-Volatile Semiconductor Memory Device Including Application of Different Voltages to Memory Cells Based on Their Proximity to a Selected Memory Cell
Patent:
50,025 →
Application:
17/004,584 →
Nonvolatile Semiconductor Memory Device
Semiconductor Memory Device Having a Protective Layer Provided Between a Source Contact and a Spacer Insulating Layer
Semiconductor Memory Device Including a Laminated Body with a Plurality of Semiconductor Layers
Nonvolatile Semiconductor Memory Device and Method of Manufacturing the Same
Application:
17/183,599 →
Publication:
US 2021/0202263
Semiconductor Memory Device and Method of Manufacturing the Same
Nonvolatile Semiconductor Memory Device Including a Memory Cell Array and a Control Circuit Applying a Reading Voltage
Non-Volatile Semiconductor Memory Device and Memory System
Nonvolatile Semiconductor Memory Device
Semiconductor Memory Device Including an Asymmetrical Memory Core Region
Nonvolatile Semiconductor Memory Device
Nonvolatile Semiconductor Memory Device
Application:
17/374,271 →
Publication:
US 2021/0343337
Semiconductor Memory Device with a Three-Dimensional Stacked Memory Cell Structure
Semiconductor Memory Device and Production Method Thereof
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.