Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device includes a control circuit configured to control a soft program operation of setting nonvolatile memory cells to a first threshold voltage distribution state of the nonvolatile memory cells. When a characteristic of the nonvolatile memory cells is in a first state, the control circuit executes the soft program operation by applying a first voltage for setting the nonvolatile memory cells to the first threshold voltage distribution state to first word lines, and applying a second voltage higher than the first voltage to a second word line. When the characteristic of the nonvolatile memory cells is in a second state, the control circuit executes the soft program operation by applying a third voltage equal to or lower than the first voltage to the first word lines and applying a fourth voltage lower than the second voltage to the second word line.
1. A nonvolatile semiconductor memory device, comprising:
a memory string including a plurality of nonvolatile memory cells for data storage which are capable of storing multi-bit data connected in series;
a first dummy cell which is not used for data storage provided at at least a first end of the memory string;
select transistors connected to both ends of the memory string respectively;
word lines connected to control gate electrodes of the nonvolatile memory cells for data storage;
a first dummy word line connected to a control gate electrode of the first dummy cell;
a bit line connected to a first end of the memory string;
a source line connected to a second end of the memory string; and
a control circuit configured to perform an erasing operation by applying an erasing voltage to the nonvolatile memory cell,
wherein before a pre-program operation before an erasing operation to the nonvolatile memory cells, the control circuit performs a pre-preverify operation to the nonvolatile memory cells.
2. The nonvolatile semiconductor memory device according to claim 1 , wherein
the control circuit performs the pre-preverify operation to the first dummy cell.
3. The nonvolatile semiconductor memory device according to claim 1 , wherein
during the control circuit performing the pre-program operation after the pre-preverify operation, a first voltage is applied to the memory cells, and a second voltage different from the first voltage is applied to the first dummy cell.
4. The nonvolatile semiconductor memory device according to claim 3 , wherein
the second voltage is lower than the first voltage.
5. The nonvolatile semiconductor memory device according to claim 3 , wherein
the first voltage is applied to the word lines connected to control gate electrodes of the nonvolatile memory cells, the second voltage is applied to the first dummy word line connected to a control gate electrode of the first dummy cell.
6. The nonvolatile semiconductor memory device according to claim 1 , wherein
whether or not the pre-program operation is performed is determined according to a result of the pre-preverify operation.
7. The nonvolatile semiconductor memory device according to claim 2 , further comprising:
a second dummy cell provided at the second end of the memory string, wherein
the pre-preverify operation is performed to the second dummy cell.
8. The nonvolatile semiconductor memory device according to claim 3 , wherein
after the pre-program operation is finished, the control circuit is configured to start the erasing operation without performing a read operation.