IP Library › Granted Patent US 11,233,328
Granted Patent B2
US 11,233,328 · App. 16/565,573 · Granted Jan 25, 2022

Dual-band antenna, device and method for manufacturing

Inventors: Miroslav Samardzija (Mountain View, CA); Brian Nam (San Jose, CA); Ming-Tsung Su (Palo Alto, CA); Liem Hieu Dinh Vo (San Jose, CA)
Assignee: Plume Design, Inc.
H01Q5/30H01Q1/24H01Q5/10H01Q5/378H01Q7/00
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Quick Facts
Patent No.
US 11,233,328
App. No.
16/565,573
Granted
Jan 25, 2022
Kind
B2
Abstract

A dual-band antenna or coupled resonators, related wireless device applications, and methods of manufacturing the same are provided. Embodiments of the antenna have resonant frequencies in a lower 2-3 GHz frequency band and a higher 5-6 GHz frequency band range. The antenna has a high frequency portion that may be configured to operate as an inverted F antenna. The high frequency element is also positioned adjacent to a nearby parasitic element. In operation, the high frequency element and the parasitic element couple together and form a current loop, or loop antenna which is configured to resonate at a low frequency band.

Claims (25)

1. A dual-band antenna comprising:

a ground plane functioning as a heat sink;

a molded parasitic element electrically connected to the ground plane, the parasitic element being part of the heat sink, wherein a first width of the parasitic element is larger at a first end relative to a second width of the parasitic element at a second end; and

a high frequency element for resonating at a high frequency band and connected to the ground plane via a short, the high frequency element configured as an inverted F antenna,

wherein the high frequency element is capacitively coupled to the parasitic element forming a loop antenna that resonates at a low frequency band;

wherein the high frequency band is in 5-6 GHz range, and the low frequency band is in 2-3 GHz range.

2. The dual-band antenna of claim 1 , wherein the inverted F antenna has a portion such that a width of the portion is greater than ¼ of a length of the portion.

3. The dual-band antenna of claim 1 , wherein the parasitic element is formed from one of a shield can, part of the heat sink, an enclosure, and a stamped metallic sheet.

4. The dual-band antenna of claim 1 , in which the loop antenna comprises a mechanical connection to the ground plane.

5. The dual-band antenna of claim 1 , in which the parasitic element is manufactured as a separate component.

6. A wireless device having a housing, the wireless device comprising:

a heat sink; and

at least one dual-band antenna comprising:

a high frequency element that resonates in a high frequency band, the high frequency element configured as an inverted F antenna; and

a molded parasitic element capacitively coupled to the high frequency element forming a current loop, the parasitic element being part of the heat sink, wherein a first width of the parasitic element is larger at a first end relative to a second width of the parasitic element at a second end;

wherein the current loop resonates at a low frequency band;

wherein the high frequency band is in 5-6 GHz range, and the low frequency band is in 2-3 GHz range.

7. The wireless device of claim 6 , further comprising at least one device component that is one of a fan module and a printed circuit board.

8. The wireless device of claim 6 , wherein a portion of the inverted F antenna has a width that is greater than ¼ of a length of the portion.

9. A method for manufacturing a wireless device, the method comprising:

providing a heat sink disposed within a housing of the wireless device, and

providing at least one antenna element disposed within the housing, the at least one antenna element having a molded parasitic element and a high frequency element, the parasitic element being part of the heat sink, wherein a first width of the parasitic element is larger at a first end relative to a second width of the parasitic element at a second end,

wherein the high frequency element is an inverted F antenna that resonates at a high frequency band, and the high frequency element is capacitively coupled to the parasitic element forming a current loop that resonates at a low frequency band;

wherein the high frequency band is in 5-6 GHz range, and the low frequency band is in 2-3 GHz range.

10. The method of claim 9 , wherein the step of providing the at least one antenna element comprises manufacturing the parasitic element as a separate component.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 10, 2019
From: SAMARDZIJA, MIROSLAV; NAM, BRIAN; SU, MING-TSUNG; VO, LIEM HIEU DINH
To: PLUME DESIGN, INC.
Reel/Frame 050322/0210 →
Continuity (1)
Related Publication 20210075106A1 · Mar 11, 2021
Cited By (1)
US 12,489,195