Pattern shape measuring method

1. A pattern shape measuring method comprising:

acquiring a second data that specifies design data of a measurement object and a pattern of the measurement object, and the design data includes a pattern data;

extracting a measurement pattern by using the design data and the second data;

acquiring image data of the measurement object;

acquiring a first data by extracting a contour of an element corresponding to the measurement pattern, among elements in composition of the pattern, from the image data; and

calculating an evaluation value for the design data based on the difference between the first data and the design data.

2. The pattern shape measuring method according to claim 1 , further comprising:

setting a calculation region to calculate the evaluation value in the pattern data,

wherein, in calculating the evaluation value, the evaluation value for the calculation region of the pattern of the measurement object is calculated.

3. The pattern shape measuring method according to claim 2 , wherein, in setting the calculation region includes

setting a non-calculation region where a variation amount of the element is larger than a predetermined value, and

setting a calculation region other than the non-calculation region on a perimeter of the pattern data.

4. The pattern shape measuring method according to claim 3 , wherein setting the non-calculation region includes

extracting an inflection point on the perimeter of the pattern data, and

setting a predetermined range from the inflection point.

5. The pattern shape measuring method according to claim 1 , wherein the evaluation value is calculated by standardizing an area of a difference between the pattern data and the contour by using a perimeter length of the pattern data.

6. The pattern shape measuring method according to claim 1 , wherein

the measurement object is a mask, and the design data includes resolution pattern data that are resolved on a wafer by a light exposure process using the mask, and non-resolution pattern data that are not resolved on the wafer, and

the second data specifies all or part of the resolution pattern data.

7. The pattern shape measuring method according to claim 6 , wherein the second data is at a barycenter position of the resolution pattern data.

8. The pattern shape measuring method according to claim 1 , wherein,

the first data comprises a first contour data and a second contour data, and the first contour data includes a data part in which the contour and a region surrounded by the contour are set and a non-data part in which a region other than the data part, and the second contour data includes the data part and the non-data part which are inverted from the first contour data, and

the evaluation value is calculated by using the first contour data or the second contour data in accordance with a data structure of the design data.

9. The pattern shape measuring method according to claim 1 , further comprising:

generating inverted design data and inverted second data by inverting a data part for which data exists and a non-data part for which data does not exist, in pattern data and a region other than the pattern data in the design data and the second data, wherein

the measurement pattern is extracted by using the second data or the inverted second data in accordance with a data structure of the first data, and

the evaluation value is calculated by using the design data or the inverted data in accordance with the data structure of the first data.

10. The pattern shape measuring method according to claim 1 , wherein the image data is SEM image data.