Substrate treatment apparatus and manufacturing method of semiconductor device
In a manufacturing method of a semiconductor device according to one embodiment, a first gas containing a first metal element is introduced into a chamber having a substrate housed therein. Next, the first gas is discharged from the chamber using a purge gas. Subsequently, a second gas reducing the first gas is introduced into the chamber. Next, the second gas is discharged from the chamber using the purge gas. Further, a third gas different from the first gas, the second gas, and the purge gas is introduced into the chamber at least either at a time of discharging the first gas or at a time of discharging the second gas.
1. A manufacturing method of a semiconductor device using Atomic Layer Deposition (ALD), the method comprising:
introducing a first gas containing a first metal element into a chamber having a substrate housed therein;
after introducing the first gas, introducing a purge gas into the chamber;
after introducing the purge gas, introducing a second gas reducing the first gas into the chamber;
after introducing the second gas, newly introducing the purge gas and a third gas into the chamber,
wherein the third gas is a different material from the first gas, the second gas, and the purge gas.
2. The method of claim 1 , wherein the third gas is a gas breaking chemical bonds between the first metal element and a second element contained in any one of the first gas, the second gas, and by-products generated by a chemical reaction between the first gas and the second gas.
3. The method of claim 2 , wherein bond energy between the second element and a third element contained in the third gas is larger than bond energy between the first element and the second element.
4. The method of claim 1 , wherein
the first gas is a tungsten hexafluoride gas,
the second gas is a hydrogen gas, and
the third gas is a gas containing halogen, a gas containing oxygen, or a gas containing carbon and hydrogen.
5. The method of claim 1 , wherein
the first gas is a tungsten hexafluoride gas (WF 6 ),
the second gas is a hydrogen gas, and
the third gas is a rare gas heated to a temperature equal to or higher than a film formation temperature at which a film of the first element is formed on the substrate.
6. The method of claim 1 , wherein the purge gas is heated.
7. The method of claim 1 , wherein the third gas is a gas containing a halogen.
8. The method of claim 1 , wherein the third gas is a gas containing oxygen.
9. The method of claim 1 , wherein the third gas is a gas containing carbon and hydrogen.
10. A manufacturing method of a semiconductor device using Atomic Layer Deposition (ALD), the method comprising:
introducing a first gas containing a first metal element into a chamber having a substrate housed therein;
after introducing the first gas, introducing a purge gas into the chamber;
after introducing the purge gas, introducing a second gas reducing the first gas into the chamber; and
after introducing the second gas, newly introducing the purge gas into the chamber,
wherein a third gas containing a halogen is introduced in the chamber with the newly introduced purge gas after introducing the first gas or after introducing the second gas.