Bond-over-active circuity gallium nitride devices
Implementations of semiconductor devices may include: a first layer with a plurality of cells, each cell having a drain finger, a source finger and a gate ring; a second layer having a drain pad and a source pad, the drain pad having a width and a source pad having a width substantially the same as the drain pad; wherein a width of each drain finger of the first layer is wider than a width of each source finger of the first layer; and wherein each drain pad is coupled to each drain finger through a first contact and the source pad is coupled to each source finger through a second contact, where a width of the first contact is wider than a width of the second contact.
1. A semiconductor device comprising:
a first metal layer comprising an active area and a non-active area;
a second metal layer comprising at least one drain pad, at least one source pad and at least one gate pad; and
at least one gate bus;
wherein the active area comprises a plurality of source fingers and a plurality of drain fingers interdigitated with one another;
wherein the at least one drain pad is coupled to the plurality of drain fingers at one end of the plurality of drain fingers;
wherein the at least one drain pad is located only in the non-active area of the first metal layer; and
wherein the first metal layer is electrically coupled to the second metal layer.
2. The semiconductor device of claim 1 , wherein the plurality of drain fingers are coupled together at one end.
3. The semiconductor device of claim 1 , further comprising a single contact between the at least one drain pad and the plurality of drain fingers.
4. The semiconductor device of claim 1 , wherein the at least one source pad is located only in the active area of the first metal layer.
5. The semiconductor device of claim 1 , further comprising a second source pad and wherein the at least one drain pad is located between the at least one source pad and the second source pad.
6. The semiconductor device of claim 1 , further comprising a second drain pad, wherein the at least one source pad is located between the at least one drain pad and the second drain pad.
7. A semiconductor device comprising:
a first metal layer comprising an active area and a non-active area; and
a second metal layer comprising at least one drain pad, at least one source pad and at least one gate pad;
wherein the active area comprises a plurality of source fingers and a plurality of drain fingers interdigitated with one another;
wherein the at least one drain pad is coupled to the plurality of drain fingers at one end of the plurality of drain fingers;
wherein the at least one drain pad is located only in the non-active area of the first metal layer; and
wherein the first metal layer is electrically coupled to the second metal layer.
8. The semiconductor device of claim 7 , wherein the plurality of drain fingers are coupled together at one end.
9. The semiconductor device of claim 7 , further comprising a single contact between the at least one drain pad and the plurality of drain fingers.
10. The semiconductor device of claim 7 , wherein the at least one source pad is located only in the active area of the first metal layer.
11. The semiconductor device of claim 7 , further comprising a second source pad and wherein the at least one drain pad is located between the at least one source pad and the second source pad.
12. The semiconductor device of claim 7 , further comprising a second drain pad, wherein the at least one source pad is located between the at least one drain pad and the second drain pad.
13. A semiconductor device comprising:
a first metal layer comprising an active area and a non-active area;
a second metal layer comprising at least one drain pad and at least one source pad; and
one of at least one gate bus, at least one gate pad, or at least one gate bus and at least one gate pad;
wherein the active area comprises a plurality of source fingers and a plurality of drain fingers interdigitated with one another;
wherein the at least one drain pad is coupled to the plurality of drain fingers at one end of the plurality of drain fingers;
wherein the at least one drain pad is located only in the non-active area of the first metal layer; and
wherein the first metal layer is electrically coupled to the second metal layer.
14. The semiconductor device of claim 13 , wherein the plurality of drain fingers are coupled together at one end.
15. The semiconductor device of claim 13 , further comprising a single contact between the at least one drain pad and the plurality of drain fingers.
16. The semiconductor device of claim 13 , wherein the at least one source pad is located only in the active area of the first metal layer.
17. The semiconductor device of claim 13 , further comprising a second source pad and wherein the at least one drain pad is located between the at least one source pad and the second source pad.
18. The semiconductor device of claim 13 , further comprising a second drain pad, wherein the at least one source pad is located between the at least one drain pad and the second drain pad.