Semiconductor device and method of manufacturing the same
In one embodiment, a semiconductor device includes a first film including a plurality of electrode layers and a plurality of insulating layers provided alternately in a first direction, and a first semiconductor layer provided in the first film via a charge storage layer and extending in the first direction. The device further includes a first conductive member provided in the first film and extending in the first direction, and a second semiconductor layer provided on the first film to contact the first semiconductor layer. The second semiconductor layer includes a first surface on a side of the first film, and a second surface on an opposite side of the first surface. The second surface is an uneven face protruding towards the first direction.
1. A semiconductor device comprising:
a first film including a plurality of electrode layers and a plurality of insulating layers provided alternately in a first direction;
a first semiconductor layer provided in the first film via a charge storage layer and extending in the first direction;
a first conductive member provided in the first film and extending in the first direction; and
a second semiconductor layer provided on the first film to contact the first semiconductor layer,
wherein
the second semiconductor layer includes a first surface on a side of the first film, and a second surface on an opposite side of the first surface, and
the second surface is an uneven face protruding towards the first direction.
2. The device of claim 1 , further comprising a first insulator provided on a surface of the second semiconductor layer.
3. The device of claim 2 , further comprising a first electrode provided on a surface of the first insulator.
4. The device of claim 3 , further comprising a second conductive member provided outside the first film and extending in the first direction,
wherein the first electrode is provided on the surface of the first insulator to contact the second conductive member.
5. The device of claim 1 , wherein the second semiconductor layer is an n-type semiconductor layer.
6. The device of claim 1 , wherein the second semiconductor layer is a p-type semiconductor layer.
7. The device of claim 1 , wherein the second semiconductor layer is provided on a surface of the first film via a high-dielectric insulator.
8. The device of claim 7 , wherein the high-dielectric insulator includes a rare-earth element.
9. The device of claim 1 , wherein
the first semiconductor layer includes a first portion protruding towards the second surface,
the first conductive member includes a second portion protruding towards the second surface, and
the second semiconductor layer is provided to contact the first portion of the first semiconductor layer and the second portion of the first conductive member.
10. The device of claim 1 , wherein the first surface does not protrude towards the second surface.
11. The device of claim 1 , further comprising a first chip including a first pad, and a second chip including a second pad provided on the first pad, wherein the second chip comprises:
the first film;
the first semiconductor layer;
the first conductive member;
the second semiconductor layer;
a first insulator provided on a surface of the second semiconductor layer; and
a first electrode provided on a surface of the first insulator.
12. The device of claim 11 , further comprising a second conductive member provided outside the first film and extending in the first direction,
wherein the first electrode is provided on the surface of the first insulator to contact the second conductive member.
13. The device of claim 11 , wherein the second semiconductor layer is provided on a surface of the first film via a high-dielectric insulator.
14. The device of claim 13 , wherein the high-dielectric insulator includes a rare-earth element.
15. The device of claim 11 , wherein
the first semiconductor layer includes a first portion protruding towards the second surface,
the first conductive member includes a second portion protruding towards the second surface, and
the second semiconductor layer is provided to contact the first portions of the first semiconductor layer and the second portion of the first conductive member.
16. A semiconductor device comprising:
a first film including a plurality of electrode layers and a plurality of insulating layers provided alternately in a first direction;
a first semiconductor layer provided in the first film via a charge storage layer and extending in the first direction;
a first conductive member provided in the first film, a longest dimension of the first conductive member extending in the first direction; and
a second semiconductor layer provided on the first film to contact the first semiconductor layer,
wherein
the second semiconductor layer includes a first surface on a side of the first film, and a second surface on an opposite side of the first surface, and
the first surface and the second surface are flat faces.
17. A semiconductor device comprising:
a first film including a plurality of electrode layers and a plurality of insulating layers provided alternately in a first direction;
a first semiconductor layer provided in the first film via a charge storage layer and extending in the first direction;
a first conductive member provided in the first film and extending in the first direction; and
a second semiconductor layer provided on the first film to contact the first semiconductor layer,
wherein
the second semiconductor layer includes a first surface on a side of the first film, and a second surface on an opposite side of the first surface, and
the second surface is an uneven face protruding towards the first direction.