IP Library Granted Patent US 11,536,260
Granted Patent B2
US 11,536,260 · App. 16/570,352 · Granted Dec 27, 2022

Micro-electromechanical system pump

Inventors: Hao-Jan Mou (Hsinchu, TW); Rong-Ho Yu (Hsinchu, TW); Cheng-Ming Chang (Hsinchu, TW); Hsien-Chung Tai (Hsinchu, TW); Wen-Hsiung Liao (Hsinchu, TW); Chi-Feng Huang (Hsinchu, TW); Yung-Lung Han (Hsinchu, TW); Chang-Yen Tsai (Hsinchu, TW)
Assignee: MICROJET TECHNOLOGY CO., LTD.
F04B43/046H01L41/083F05C2253/12
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Quick Facts
Patent No.
US 11,536,260
App. No.
16/570,352
Granted
Dec 27, 2022
Kind
B2
Abstract

A MEMS pump includes a first substrate, a first oxide layer, a second substrate, a second oxide layer, a third substrate and a piezoelectric element sequentially stacked to form the entire structure of the MEMS pump. The first substrate has a first thickness and at least one inlet aperture. The first oxide layer has at least one fluid inlet channel and a convergence chamber, wherein the fluid inlet channel communicates with the convergence chamber and the inlet aperture. The second substrate has a second thickness and a through hole, and the through hole is misaligned with the inlet aperture and communicates with the convergence chamber. The second oxide layer has a first chamber with a concave central portion. The third substrate has a third thickness and a plurality of gas flow channels, wherein the gas flow channels are misaligned with the through hole.

Claims (21)

1. A micro-electromechanical system (MEMS) pump, comprising:

a first substrate having a first thickness and at least one inlet aperture;

a first oxide layer having at least one fluid inlet channel and a convergence chamber, wherein the first oxide layer is formed and covered upon the first substrate one end of the at least one fluid inlet channel communicates with the convergence chamber, and the other end of the at least one fluid inlet channel communicates with the corresponding inlet aperture;

a second substrate having a second thickness and a through hole, wherein the second substrate is placed upon the first oxide layer, and the through hole is misaligned with the inlet aperture of the first substrate and communicates with the convergence chamber of the first oxide layer;

a second oxide layer formed upon the second substrate, wherein the second oxide layer has a first chamber with a central portion having a concave curve;

a third substrate having a third thickness and a plurality of gas flow channels, wherein the third substrate is placed upon the second oxide layer, the plurality of gas flow channels are misaligned with the through hole of the second substrate, and the first chamber of the second oxide layer communicates with the through hole of the second substrate and the plurality of gas flow channels of the third substrate; and

a piezoelectric element formed upon the third substrate and comprising:

a first electrode layer;

a piezoelectric layer disposed on the first electrode layer;

an insulation layer covered on a part of the piezoelectric layer and a part of the first electrode layer; and

a second electrode layer disposed on a part of the insulation layer and a uncovered area of the piezoelectric layer for electrically coupling with the piezoelectric layer, wherein the uncovered area of the piezoelectric layer is not in contact with the insulation layer.

2. The MEMS pump according to claim 1 , wherein the first substrate, the second substrate and the third substrate are silicon chips.

3. The MEMS pump according to claim 2 , wherein the silicon chips are polysilicon chips.

4. The MEMS pump according to claim 1 , wherein the inlet hole of the first substrate is pyramid-shaped.

5. The MEMS pump according to claim 1 , wherein the first thickness is from 150 to 200 micrometers.

6. The MEMS pump according to claim 1 , wherein the second thickness is from 2 to 5 micrometers.

7. The MEMS pump according to claim 1 , wherein the third thickness is from 10 to 20 micrometers.

8. The MEMS pump according to claim 1 , wherein the first thickness is larger than the third thickness, and the third thickness is larger than the second thickness.

9. The MEMS pump according to claim 1 , wherein the thickness of the first oxide layer is from 10 to 20 micrometers.

10. The MEMS pump according to claim 1 , wherein the thickness of the second oxide layer is from 0.5 to 2 micrometers.

11. The MEMS pump according to claim 1 , wherein the thickness of the first oxide layer is larger than the thickness of the second oxide layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2019
From: MOU, HAO-JAN; YU, RONG-HO; CHANG, CHENG-MING; TAI, HSIEN-CHUNG; LIAO, WEN-HSIUNG; HUANG, CHI-FENG; HAN, YUNG-LUNG; TSAI, CHANG-YEN
To: MICROJET TECHNOLOGY CO., LTD.
Reel/Frame 050505/0273 →
Priority Claims (2)
TW 107132694 · Sep 17, 2018 · national
TW 107133250 · Sep 20, 2018 · national
Continuity (1)
Related Publication 20200088185A1 · Mar 19, 2020
Cited By (1)
US 12,467,446