Sequential infiltration synthesis extreme ultraviolet single expose patterning
A method includes depositing a resist layer onto a hard mask layer to form a multi-layer patterning material film stack on a semiconductor substrate, directing patterning radiation onto the film stack to form a developed pattern in the resist layer and exposing the film stack to at least one gas precursor in connection with a sequential infiltration synthesis process. The film stack is configured to facilitate selective infiltration of the at least one gas precursor into the resist layer.
1. A method, comprising:
depositing a resist layer onto a hard mask layer to form a multi-layer patterning material film stack on a semiconductor substrate;
directing patterning radiation onto the film stack to form a developed pattern in the resist layer;
exposing the film stack to at least one gas precursor in connection with a sequential infiltration synthesis process wherein the film stack is configured to facilitate selective infiltration of the at least one gas precursor into the resist layer to modify at least one characteristic of the resist layer, and
grafting a polymer brush material to at least portions of the hard mask layer, the polymer brush material impeding infiltration of the at least one precursor into the hard mask layer.
2. The method of claim 1 wherein grafting the polymer brush material includes grafting a polymer brush onto the at least portions of the hard mask layer corresponding to openings in the developed pattern of the resist layer.
3. The method of claim 2 wherein grafting the polymer brush material is performed subsequent to directing patterning radiation.
4. The method of claim 2 wherein grafting the polymer brush material is performed prior to depositing the resist layer.
5. The method of claim 2 wherein the polymer brush material includes one of polystyrene, copolymers of polystyrene, or a self-assembled monolayer having an aromatic content.
6. The method of claim 1 including grafting a self-assembled monolayer onto at least portions of the resist layer.
7. The method of claim 6 wherein the monolayer is configured to facilitate infiltration of the at least one gas precursor into the resist layer.
8. The method of claim 7 wherein the monolayer includes one of an acrylate-based unit or a polymethacrylate based polymer brush.
9. The method of claim 1 including:
etching the hard mask layer in accordance with the developed pattern; and
removing remaining portions of the resist layer.
10. The method of claim 1 wherein directing patterning radiation includes utilizing extreme ultraviolet lithography.
11. A multi-layered patterning film stack, comprising:
a hard mask layer; and
a patterned resist layer on the hard mask layer,
wherein one of the hard mask layer and the resist layer is configured to facilitate selective infiltration of at least one gas precursor of a sequential infiltration synthesis process into the resist layer to modify at least one characteristic of the resist layer; and
wherein the hard mask layer includes a polymer brush material configured to impede infiltration of the at least one precursor into the hard mask layer.
12. The film stack of claim 11 wherein the polymer brush material is grafted on the hard mask layer within portions corresponding to openings in the resist layer.
13. The film stack of claim 12 wherein the polymer brush material includes polystyrene.
14. The film stack of claim 11 wherein the resist layer includes a self-assembled monolayer graft disposed onto at least portions of the resist layer, the monolayer graft facilitating infiltration of the at least one gas precursor into the resist layer.
15. The method of claim 14 wherein the monolayer graft includes polymethacrylate.
16. A semiconductor structure comprising:
a semiconductor substrate; and
a multi-layer patterning material film stack disposed on the semiconductor substrate, the film stack comprising at least a hard mask layer and a resist layer disposed over the hard mask layer, the resist layer having a desired pattern to modify at least one characteristic of the resist layer;
wherein the film stack is configured to facilitate selective infiltration of at least one gas precursor of a sequential infiltration synthesis process into the resist layer; and
wherein the film stack includes a polymer brush graft material on at least portions of the hard mask layer, the polymer brush graft material impeding infiltration of the at least one precursor into the hard mask layer.
17. The semiconductor substrate of claim 16 wherein the film stack includes a self-assembled monolayer graft disposed onto at least portions of the resist layer, the monolayer graft facilitating infiltration of the at least one gas precursor into the resist layer.
18. The semiconductor substrate of claim 16 wherein the polymer brush graft material is disposed within portions corresponding to openings in the patterned resist layer.
19. The semiconductor substrate of claim 16 wherein the polymer brush graft material comprises one of polystyrene, copolymers of polystyrene, or a self-assembled monolayer having an aromatic content.
20. The semiconductor substrate of claim 17 wherein the monolayer graft includes one of an acrylate-based unit or a polymethacrylate based polymer brush.