IP Library Granted Patent US 11,018,577
Granted Patent B2
US 11,018,577 · App. 16/571,680 · Granted May 25, 2021

Charge pump circuit for providing voltages to multiple switch circuits

Inventor: Lei Huang (Sunnyvale, CA)
Assignee: FAIRCHILD SEMICONDUCTOR CORPORATION
H02M3/07G05F3/262G11C5/145H03K17/063H03K17/687H02M1/088
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Quick Facts
Patent No.
US 11,018,577
App. No.
16/571,680
Granted
May 25, 2021
Kind
B2
Abstract

A charge pump circuit generates a charge pump voltage that powers a bias circuit. The bias circuit generates a reference current and generates switch currents from the reference current. Gate-source voltages are generated from the switch currents and applied to switching components of switch circuits to connect two nodes. The gate-source voltages can be generated in the bias circuit and provided to the switch circuits. The gate-source voltages can also be generated in the switch circuits.

Claims (33)

1. A circuit comprising:

a charge pump circuit configured to generate a first charge pump voltage;

a bias circuit configured to generate a reference current using the first charge pump voltage, generate a switch current using the reference current, and generate a substantially constant gate-source voltage using the switch current, the bias circuit including an impedance element and a resistor coupled to the impedance element in series, the impedance element having a first end at which a second charge pump voltage is generated and a second end, the resistor having a first end coupled to the second end of the impedance element and a second end at which a common node voltage is generated, the gate-source voltage being a difference between the second charge pump voltage and the common mode voltage; and

a plurality of switch circuits each including a transistor, the common node voltage being a source voltage of the transistor,

wherein the bias circuit provides the gate-source voltage as a gate-source voltage of the transistor.

2. The circuit of claim 1 , wherein the bias circuit further comprises:

a current source generating the reference current; and

a current mirror mirroring the reference current to generate the switch current.

3. The circuit of claim 1 , wherein the bias circuit further comprises a diode coupled between the charge pump and the impedance element.

4. The circuit of claim 1 , wherein a voltage at the second end of the impedance element is a bias reference voltage, and

wherein the bias circuit provides the second charge pump voltage and the bias reference voltage to each of the plurality of switch circuits.

5. The circuit of claim 4 , wherein each of the plurality of switch circuits further comprises a voltage translator circuit configured to receive the second charge pump voltage and convert the second charge pump voltage into a control voltage that drives the transistor.

6. The circuit of claim 5 , wherein the voltage translator circuit increases a first level of the second charge pump voltage to a second level of the control voltage, the second level of the control voltage being sufficiently high to drive the transistor in each of the plurality of switch circuits.

7. The circuit of claim 5 , wherein each of the plurality of switch circuits further comprises a gate control circuit configured to generate an enable signal in response to a switching enable signal and provides the enable signal to the voltage translator circuit, and

wherein the voltage translator circuit generates the control voltage having a first level in response to the enable signal having a first logic value and generates the control voltage having a second level in response to the enable signal having a second logic value.

8. The circuit of claim 1 , wherein the plurality of switch circuits are switch circuits of computer interface ports.

9. The circuit of claim 8 , wherein the computer interface ports comprise Universal Serial Bus (USB) ports.

10. The circuit of claim 1 , wherein the charge pump circuit comprises a plurality of series-connected charge pump cells.

11. The circuit of claim 1 , wherein the second end of the impedance element is directly coupled to the first end of the resistor.

12. A circuit comprising:

a charge pump circuit configured to generate a charge pump voltage;

a bias circuit configured to generate a reference current using the charge pump voltage, generate a switch current using the reference current, and generate a substantially constant gate-source voltage using the switch current, the bias circuit including an impedance element, a resistor coupled to the impedance element in series, and a diode coupled between the charge pump and the impedance element, the gate-source voltage including a first voltage drop across the impedance element and a second voltage drop across the resistor; and

a plurality of switch circuits each including a transistor, the transistor having a gate and a source that receive the gate-source voltage from the bias circuit.

13. A circuit comprising:

a charge pump circuit configured to generate a first charge pump voltage;

a bias circuit configured to generate a reference current using the first charge pump voltage, generate a switch current using the reference current, and generate a substantially constant gate-source voltage using the switch current, the bias circuit including an impedance element and a resistor coupled to the impedance element in series, the impedance element having a first end at which a second charge pump voltage is generated, the gate-source voltage including a first voltage drop across the impedance element and a second voltage drop across the resistor; and

a plurality of switch circuits each including a transistor, the transistor having a gate and a source that receive the gate-source voltage from the bias circuit,

wherein each of the plurality of switch circuits further comprises a voltage translator circuit configured to receive the second charge pump voltage and convert the second charge pump voltage into a control voltage that drives the transistor.

14. The circuit of claim 13 , wherein a voltage at a second end of the impedance element is a bias reference voltage, the impedance element being coupled to the resistor at the second end, and

wherein the bias circuit provides the second charge pump voltage and the bias reference voltage to each of the plurality of switch circuits.

15. The circuit of claim 13 , wherein the voltage translator circuit increases a first level of the second charge pump voltage to a second level of the control voltage, the second level of the control voltage being sufficiently high to drive the transistor in each of the plurality of switch circuits.

16. The circuit of claim 13 , wherein each of the plurality of switch circuits further comprises a gate control circuit configured to generate an enable signal in response to a switching enable signal and provides the enable signal to the voltage translator circuit.

17. The circuit of claim 16 , wherein the voltage translator circuit generates the control voltage having a first level in response to the enable signal having a first logic value and generates the control voltage having a second level in response to the enable signal having a second logic value.

Assignments (8)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 051145, FRAME 0062 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064079/0474 →
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 058871, FRAME 0799 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 065653/0001 →
SECURITY INTEREST Recorded Nov 12, 2021
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 058871/0799 →
RELEASE OF SECURITY INTEREST Recorded Oct 28, 2021
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 057969/0206 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 3, 2021
From: FAIRCHILD SEMICONDUCTOR CORPORATION
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 057694/0374 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EXCLUSION OF FAIRCHILD SEMICONDUCTOR CORPORATION OF CONVEYING PARTY PREVIOUSLY RECORDED ON REEL 051145 FRAME 0062. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Dec 3, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 051170/0781 →
SECURITY INTEREST Recorded Nov 26, 2019
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 051145/0062 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 16, 2019
From: HUANG, LEI
To: FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 050385/0647 →