Power semiconductor module arrangement and housing for a power semiconductor arrangement
A power semiconductor module arrangement includes a substrate including a dielectric insulation layer, a first metallization layer arranged on a first side of the dielectric insulation layer, and a second metallization layer arranged on a second side of the dielectric insulation layer, the dielectric insulation layer being disposed between the first and second metallization layers. The arrangement further includes at least one first connection element mounted on the substrate, a housing having sidewalls, and at least one second connection element. Each second connection element includes a first part extending vertically through a sidewall of the housing, a second part coupled to a first end of the first part and protruding from the sidewall in a vertical direction, and a third part coupled to a second end of the first part opposite the first end. Each third part is detachably coupled to one of the at least one first connection element.
1. A power semiconductor module arrangement, comprising:
a substrate comprising a dielectric insulation layer, a first metallization layer arranged on a first side of the dielectric insulation layer, and a second metallization layer arranged on a second side of the dielectric insulation layer, the dielectric insulation layer being disposed between the first metallization layer and the second metallization layer;
at least one first connection element mounted on the substrate;
a housing comprising sidewalls; and
at least one second connection element, each second connection element comprising a first part extending vertically through a sidewall of the housing, a second part coupled to a first end of the first part and protruding from the sidewall in a vertical direction, and a third part coupled to a second end of the first part opposite the first end,
wherein each third part is detachably coupled to one of the at least one first connection element.
2. The power semiconductor module arrangement of claim 1 , wherein each of the third parts protrudes from the sidewall of the housing, wherein each of the at least one first connection element comprises a tubular part configured to fit over and encircle a third part of one of the second connection elements, and wherein each of the third parts is inserted into one of the at least one first connection element such that each first connection element encircles the respective one of the third parts.
3. The power semiconductor module arrangement of claim 2 , wherein each of the third parts forms a pressfit connection with one of the at least one first connection element when detachably connected to the respective first connection element.
4. The power semiconductor module arrangement of claim 1 , wherein the third part of each of the at least one second connection element comprises a tubular part configured to fit over and encircle one of the at least one first connection element, and wherein each of the at least one first connection element is inserted into one of the third parts of the at least one second connection element such that each third part encircles the respective one of the first connection element.
5. The power semiconductor module arrangement of claim 4 , wherein each of the third parts forms a pressfit connection with one of the at least one first connection element when detachably connected to the respective first connection element.
6. The power semiconductor module arrangement of claim 1 , wherein each of the at least one first connection element has a round or oval cross section and each of the third parts has a square or rectangular cross section.
7. The power semiconductor module arrangement of claim 1 , wherein each of the at least one first connection element has a square or rectangular cross section and each of the third parts has a round or oval cross section.
8. The power semiconductor module arrangement of claim 1 , wherein each first part of the at least one second connection element is molded into one of the sidewalls of the housing.
9. The power semiconductor module arrangement of claim 1 , wherein each second part comprises a wire, a pin or a pressfit pin.
10. The power semiconductor module arrangement of claim 1 , wherein for each second connection element, the third part protrudes from a respective sidewall of the housing in the vertical direction, the second part protrudes from a first end of the sidewall, and the third part protrudes from a second end of the sidewall opposite the first end.
11. The power semiconductor module arrangement of claim 1 , wherein for each second connection element, the third part comprises a first portion protruding from a respective sidewall of the housing in a horizontal direction that is perpendicular to the vertical direction, and a second portion outside the sidewall extending perpendicular to the first portion in the vertical direction, and wherein the second portion is detachably coupled to one of the at least one first connection element.
12. The power semiconductor module arrangement of claim 1 , wherein the at least one first connection element is mounted on the first metallization layer.
13. The power semiconductor module arrangement of claim 1 , wherein the power semiconductor module arrangement comprises a plurality of the second connection elements, wherein a first subset of the plurality of second connection elements extends through a first sidewall of the housing, and wherein a second subset of the plurality of second connection elements extends through a second sidewall of the housing opposite the first sidewall.
14. The power semiconductor module arrangement of claim 1 , wherein the dielectric insulation layer comprises a plastic material, wherein the sidewalls of the housing comprise a plastic material, and wherein a welded joint is formed between the dielectric insulation layer and the sidewalls.
15. A housing for a power semiconductor module arrangement, the housing comprising:
sidewalls; and
at least one second connection element, each second connection element comprising a first part extending vertically through a sidewall of the housing, a second part coupled to a first end of the first part and protruding from the sidewall in a vertical direction, and a third part coupled to a second end of the first part opposite the first end,
wherein the housing is configured to be detachably mounted onto a substrate by detachably coupling each of the third parts to a first connection element mounted on the substrate, the substrate comprising a dielectric insulation layer, a first metallization layer arranged on a first side of the dielectric insulation layer, a second metallization layer arranged on a second side of the dielectric insulation layer, wherein the dielectric insulation layer is disposed between the first and the second metallization layer.
16. The housing of claim 15 , wherein each third part of the at least one second connection element has a square or rectangular cross section, or a round or oval cross section.
17. The housing of claim 15 , wherein each first part of the at least one second connection element is molded into one of the sidewalls of the housing.
18. The housing of claim 15 , wherein each second part of the at least one second connection element comprises a wire, a pin or a pressfit pin.
19. The housing of claim 15 , wherein for each second connection element, the third part protrudes from a respective sidewall of the housing in the vertical direction, the second part protrudes from a first end of the sidewall, and the third part protrudes from a second end of the sidewall opposite the first end.
20. The housing of claim 15 , wherein for each second connection element, the third part comprises a first portion protruding from a respective sidewall of the housing in a horizontal direction that is perpendicular to the vertical direction, and a second portion outside the sidewall extending perpendicular to the first portion in the vertical direction.