Apparatus and method for detecting time-dependent defects in a fast-charging device
An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.
1. A charged particle beam system for inspecting a wafer, comprising:
a charged particle beam source configured to:
deliver charged particles to a surface of the wafer over a time sequence; and
scan an area of the wafer, wherein the area comprises a plurality of rows of pixels; and
a controller including one or more processors configured to cause the charged particle beam system to:
produce a set of N images of the area over the time sequence, wherein N is an integer; and
compare the set of N images to detect a defect that results in a high resistance structure in the area of the wafer.
2. The system of claim 1 , wherein the charged particle beam source is further configured to:
scan a first row of the plurality of rows N times, and
after completion of scanning the first row, scan a second row of the plurality of rows N times; and
wherein the controller includes one or more processors further configured to cause the charged particle beam system to:
produce a first set of N data based on a scan of the first row,
produce a second set of N data based on a scan of the second row, and
produce the set of N images based on corresponding data of the first set and the second set of N data.
3. The system of claim 2 , wherein the charged particle beam source is further configured to:
scan the first row N times in alternate directions each time, and
scan the second row N times in alternate directions each time.
4. The system of claim 2 , wherein the controller includes one or more processors further configured to cause the charged particle beam system to:
store the first set and the second of N data, and
retrieve the corresponding data of the first set and the second set of N data to produce the set of N images.
5. The system of claim 2 , wherein the controller includes one or more processors further configured to cause the charged particle beam system to produce the set of N images by assembling a first data of the first set of N data and a first data of the second set of N data, and assembling a second data of the first set of N data and a second data of the second set of N data.
6. The system of claim 1 , wherein the charged particle beam source is further configured to:
scan a first pixel in a first row of the plurality of rows N times, and
after completion of scanning the first pixel in the first row, scan a second pixel in the first row of the plurality of rows N times; and
wherein the controller includes one or more processors further configured to cause the charged particle beam system to:
produce a first set of N data based on a scan of the first pixel,
produce a second set of N data based on a scan of the second pixel, and
produce the set of N images based on corresponding data of the first set and the second set of N data.
7. The system of claim 1 , wherein the set of N images comprise information indicating voltage contrast levels.
8. The system of claim 7 , wherein the controller includes one or more processors further configured to cause the charged particle beam system to detect a difference between the voltage contrast levels of the set of N images to identify the defect.
9. The system of claim 1 , wherein the defect comprises an electrical defect associated with an electrical leakage in the high resistance structure in the area of the wafer.
10. The system of claim 9 , wherein the high resistance structure enables formation of a fast charge device.
11. The system of claim 1 , wherein the defect that results in the high resistance structure is caused by improper formation of a material.
12. The system of claim 1 , wherein the defect that results in the high resistance structure is caused by a thin device structure.
13. The system of claim 12 , wherein the thin device structure comprises a thin oxide that remains after an etching process.
14. A non-transitory computer readable medium storing a set of instructions that is executable by a processor of a charged particle beam system to cause the charged particle beam system, with a charged particle beam source to deliver charged particles to a surface of a wafer over a time sequence, to perform a method comprising:
scanning an area of the wafer, wherein the area comprises a plurality of rows of pixels;
producing a set of N images of the area over the time sequence, wherein N is an integer; and
comparing the set of N images to detect a defect that results in a high resistance structure in the area of the wafer.
15. The computer readable medium of claim 14 , wherein the set of instructions that is executable by the processor of the charged particle beam system to cause the charged particle beam system to further perform:
scanning a first row of the plurality of rows N times;
after completion of scanning the first row, scanning a second row of the plurality of rows N times;
producing a first set of N data based on a scan of the first row;
producing a second set of N data based on a scan of the second row; and
producing the set of N images based on corresponding data of the first set and the second set of N data.