Silicon carbide devices and methods for forming silicon carbide devices

1. A silicon carbide device comprising:

a transistor cell comprising: a front side doping region having a first conductivity type, a body region having a second conductivity type, and a drift region having the first conductivity type, the body region being located between the front side doping region and the drift region in a vertical direction,

wherein the body region comprises a first portion having a first average net doping concentration and a second portion having a second average net doping concentration, the first portion being located between the drift region and the second portion, and

wherein the body region comprises a third portion having a third average net doping concentration, wherein the third portion is located between the second portion and the front side doping region.

2. The silicon carbide device according to claim 1 ,

wherein the transistor cell comprises a gate insulation layer, wherein at least the second portion is located adjacent to the gate insulation layer.

3. The silicon carbide device according to claim 1 ,

wherein at least 80% of doping atoms within the first portion are at least one of aluminum atoms or gallium atoms.

4. The silicon carbide device according to claim 1 ,

wherein at least 80% of doping atoms within the second portion are at least one of boron atoms, boron difluoride molecules, fluorine atoms or chlorine atoms.

5. The silicon carbide device according to claim 2 ,

wherein the first average net doping concentration is at least two times the second average net doping concentration, and

wherein the third average net doping concentration is at least two times the second average net doping concentration.

6. The silicon carbide device according to claim 5 ,

wherein at least 80% of doping atoms within the third portion of the body region are at least one of boron atoms, aluminum atoms or gallium atoms.

7. The silicon carbide device according to claim 5 ,

wherein the first portion is located adjacent to the gate insulation layer, wherein a first maximum net doping concentration within the third portion is higher than a second maximum net doping concentration within the first portion.

8. The silicon carbide device according to claim 1 ,

wherein the transistor cell comprises a gate insulation layer, wherein at least one of the first portion, the second portion or the third portion is located adjacent to the gate insulation layer.

9. A silicon carbide device comprising:

a transistor cell comprising: a front side doping region having a first conductivity type, a body region having a second conductivity type, and a drift region having the first conductivity type, the body region being located between the front side doping region and the drift region in a vertical direction,

wherein the body region comprises a first portion having a first average net doping concentration, a second portion having a second average net doping concentration, and a third portion having a third average net doping concentration,

the first portion being located between the drift region and the second portion, the second portion being located between the first portion and the third portion,

wherein the first portion has an extension of at least 50 nm in the vertical direction, wherein the second portion has an extension of at least 50 nm in the vertical direction, wherein the third portion has an extension of at least 50 nm in the vertical direction, and

wherein the first average net doping concentration is at least two times the second average net doping concentration, wherein the third average net doping concentration is at least two times the second average net doping concentration.

10. The silicon carbide device according to claim 9 ,

wherein the transistor cell comprises a gate insulation layer, wherein at least one of the first portion, the second portion or the third portion is located adjacent to the gate insulation layer.

11. The silicon carbide device according to claim 9 ,

wherein at least 80% of doping atoms within the first portion are aluminum atoms or gallium atoms.

12. The silicon carbide device according to claim 9 ,

wherein at least 80% of doping atoms within the second portion are at least one of boron atoms, boron difluoride molecules, fluorine atoms or chlorine atoms.

13. The silicon carbide device according to claim 9 ,

wherein at least 80% of doping atoms within the third portion are at least one of boron atoms, aluminum atoms or gallium atoms.

14. The silicon carbide device according to claim 9 ,

wherein a first maximum net doping concentration within the third portion is higher than a second maximum net doping concentration within the first portion.

15. The silicon carbide device according to claim 9 , comprising:

a current spread region having the first conductivity type,

wherein the current spread region is located between the body region and the drift region.

16. The silicon carbide device according to claim 9 ,

wherein the front side doping region is a source region of the transistor cell.

17. The silicon carbide device according to claim 9 ,

wherein the transistor cell is a vertical transistor cell.

18. A method for forming a silicon carbide device, comprising:

implanting first dopants into a silicon carbide substrate with a first implantation dose to form a first portion of a body region of a transistor of the silicon carbide device, wherein the first portion of the body region has an extension of at least 50 nm in a vertical direction;

implanting second dopants into the silicon carbide substrate with a second implantation dose to form a second portion of the body region,

wherein the first implantation dose is at least two times the second implantation dose, wherein the first implantation dose is at least 2·10 12 cm −2 ; and

forming a third portion of the body region, wherein the third portion has a higher average net doping concentration than the second portion.

19. The method according to claim 18 ,

wherein the forming the third portion comprises implanting third dopants into the silicon carbide substrate with a third implantation energy,

wherein the first dopants are implanted with a first implantation energy higher than a second implantation energy used for implanting the second dopants, and

wherein the third implantation energy is lower than the second implantation energy.

20. The method according to claim 18 ,

wherein a transistor cell comprises the body region,

wherein the transistor cell comprises a gate insulation layer, wherein at least one of the first portion, the second portion or the third portion is located adjacent to the gate insulation layer.

21. A silicon carbide device comprising:

a transistor cell comprising: a front side doping region having a first conductivity type, a body region having a second conductivity type, and a drift region having the first conductivity type, the body region being located between the front side doping region and the drift region in a vertical direction,

wherein the body region comprises a first portion having a first average net doping concentration and a second portion having a second average net doping concentration, the first portion being located between the drift region and the second portion, and

wherein the body region comprises a third portion having a third average net doping concentration.

22. The silicon carbide device according to claim 21 ,

at least some doping atoms within the first portion are gallium atoms.

23. The silicon carbide device according to claim 21 ,

wherein at least some doping atoms within the second portion are at least one of fluorine atoms or chlorine atoms.