Methods for stability monitoring and improvements to plasma sources for plasma processing
Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.
1. A method for the manufacture of microelectronic workpieces, comprising:
providing an image sensor in a process chamber;
performing a process recipe within the process chamber while a plasma is generated by a plasma source;
capturing images with the image sensor during the performing, the images being associated with the plasma source; and
adjusting one or more operating parameters for the process chamber based upon light intensity distributions determined from the captured images.
2. The method of claim 1 , wherein the determining comprises processing the captured images to analyze light intensity distributions within a predetermined spectral range.
3. The method of claim 1 , wherein the process recipe includes a selected set of ranges for parameters.
4. The method of claim 3 , wherein the selected set of ranges for parameters are associated with one or more test conditions.
5. The method of claim 1 , further comprising repeating the providing, performing, capturing, and adjusting for a plurality of process chambers.
6. The method of claim 5 , further comprising determining stability margins based upon light intensity distributions determined from captured images for the plurality of process chambers.
7. The method of claim 6 , wherein the adjusting is based upon the stability margins.
8. The method of claim 5 , further comprising determining chamber-to-chamber matching information based upon the light intensity distributions determined from captured images for the plurality of process chambers.
9. The method of claim 8 , wherein the adjusting is based upon the chamber-to-chamber matching information.
10. The method of claim 5 , wherein the image sensor is coupled to a substrate for a microelectronic workpiece positioned within the plurality of process chambers.
11. The method of claim 1 , wherein the process recipe includes a plasma etch process.
12. The method of claim 1 , wherein the process recipe includes a plasma deposition process.
13. The method of claim 1 , wherein the image sensor comprises a charge-coupled device camera.
14. The method of claim 1 , wherein the image sensor is coupled to a substrate positioned within the process chamber.
15. The method of claim 1 , wherein the image sensor is positioned on a hardware component within the process chamber.
16. The method of claim 1 , wherein the capturing comprises capturing and storing image data using the image sensor.
17. The method of claim 16 , further comprising communicating the image data to a computing system.
18. The method of claim 17 , wherein the communicating occurs through at least one wireless interface.
19. The method of claim 1 , wherein the one or more operating parameters for the process chamber comprise at least one of a process gas flow rate, a pressure, a temperature, or a source power.
20. The method of claim 1 , further comprising emitting light into the process chamber and inspecting hardware components within the process chamber using the image sensor.