Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.
1. A semiconductor device, comprising:
a metal structure electrically connected to a silicon carbide semiconductor body; and
a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body,
wherein the metal adhesion and barrier structure comprises a layer comprising titanium and tungsten,
wherein the metal adhesion and barrier structure comprises a Ti/TiN layer stack.
2. The semiconductor device of claim 1 , wherein the layer comprising titanium and tungsten is a TiW layer.
3. The semiconductor device of claim 1 , wherein the layer comprising titanium and tungsten is a TiWN layer.
4. The semiconductor device of claim 3 , wherein the atomic percent, at. %, of nitrogen in the TiWN layer is in a range of 1% to 50%.
5. The semiconductor device of claim 1 , wherein the metal adhesion and barrier structure comprises a layer comprising aluminum between the layer comprising titanium and tungsten and the silicon carbide semiconductor body.
6. The semiconductor device of claim 5 , wherein the layer comprising aluminum is in ohmic contact with the silicon carbide semiconductor body.
7. The semiconductor device of claim 1 , wherein a thickness of the metal adhesion and barrier substructure is in a range of 30 nm to 600 nm.
8. The semiconductor device of claim 1 , wherein the metal adhesion and barrier structure comprises a TiW layer and a TiWN layer, and wherein the TiW layer is arranged between the TiWN layer and the silicon carbide semiconductor body.
9. The semiconductor device of claim 1 , wherein a layer comprising titanium is arranged between the layer comprising titanium and tungsten and the silicon carbide semiconductor body.
10. The semiconductor device of claim 1 , wherein the metal structure comprises a copper layer in direct contact with the metal adhesion and barrier structure, and wherein a thickness of the copper layer is greater than 4 μm.
11. The semiconductor device of claim 10 , wherein a layer comprising tungsten is arranged between the layer comprising titanium and tungsten and the copper layer.
12. A semiconductor device, comprising:
a metal structure electrically connected to a silicon carbide semiconductor body; and
a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body,
wherein the metal adhesion and barrier structure comprises a layer comprising titanium and tungsten,
wherein the layer comprising titanium and tungsten is a TiWN layer,
wherein the atomic percent, at. %, of nitrogen in the TiWN layer is in a range of 1% to 50%.
13. A semiconductor device, comprising:
a metal structure electrically connected to a silicon carbide semiconductor body; and
a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body,
wherein the metal adhesion and barrier structure comprises a layer comprising titanium and tungsten,
wherein the metal structure comprises a copper layer in direct contact with the metal adhesion and barrier structure, and wherein a thickness of the copper layer is greater than 4 μm,
wherein a layer comprising tungsten is arranged between the layer comprising titanium and tungsten and the copper layer.