Method for determining material removal and device for the beam machining of a workpiece
A method for determining material removal by an ion beam ( 3 ) on a test workpiece ( 7 ) which is disposed in a machining chamber ( 5 ) of a housing ( 6 ) of a device ( 1 ) for beam machining, wherein the test workpiece ( 7 ) has a substrate ( 8 ) and a layer ( 9 ) applied to the substrate. The method includes a) optically determining a layer thickness (d 1 ) of the layer applied to the substrate, b) removing material of the layer from the test workpiece with the ion beam, c) optically determining the layer thickness (d 2 ) of the layer applied to the substrate, and d) determining the material removal by comparing the layer thickness determined in step a) with the layer thickness determined in step c). Also disclosed is a device ( 1 ) for beam machining a workpiece ( 2 ) with which the method can be carried out.
1. A method for determining a material removal (Δd) by an ion beam on a test workpiece which is disposed in a machining chamber of a housing of a device for beam machining, wherein the test workpiece has a substrate and a layer applied to the substrate and wherein the machining chamber has an imaging optical unit having an entry-side part, and has a shielding annularly surrounding the entry-side part of the imaging optical unit and the test workpiece, the method comprising:
a) optically determining, initially, a layer thickness (d 1 ) of the layer applied to the substrate,
b) removing material of the layer of the test workpiece with the ion beam,
c) optically determining the layer thickness (d 2 ) of the layer applied to the substrate subsequent to said removing, and
d) determining the material removal (Δd) by comparing the layer thickness (d 1 ) determined in said initial determining with the layer thickness (d 2 ) determined in said subsequent determining,
wherein a workpiece, to be machined, is disposed in the machining chamber; and
wherein the shielding protects the test workpiece and the entry-side part of the imaging optical unit during machining of the workpiece with the ion beam.
2. The method as claimed in claim 1 , wherein said initial determining and said subsequent determining comprises irradiating the test workpiece with illumination radiation.
3. The method as claimed in claim 2 , wherein the layer and the substrate of the test workpiece are transparent to the illumination radiation.
4. The method as claimed in claim 2 , wherein said initial determining and said subsequent determining comprise recording an interference spectrum of the illumination radiation reflected on the test workpiece.
5. The method as claimed in claim 4 , further comprising guiding the illumination radiation reflected on the test workpiece for recording the interference spectrum by way of a light conductor to a spectrometer disposed outside the housing.
6. The method as claimed in claim 5 , wherein the reflected illumination radiation is coupled into the light conductor by way of the imaging optical unit.
7. The method as claimed in claim 1 , wherein the layer thickness (d 1 ) is between 0.1 μm and 20 μm.
8. A device for beam machining a workpiece with an ion beam, comprising:
an ion beam source generating the ion beam,
a housing in which a machining chamber for beam machining the workpiece is formed, at least one test workpiece disposed in the housing and comprising a substrate and a layer applied to the substrate,
an illumination source illuminating the test workpiece with illumination radiation,
a spectrometer recording an interference spectrum of illumination radiation reflected on the test workpiece
a workpiece, to be machined, disposed in the machining chamber,
an imaging optical unit having an entry-side part and arranged relative to the test workpiece, and a shielding annularly surrounding and protecting the test workpiece and the entry-side part of the imaging optical unit when the workpiece is machined with the ion beam.
9. The device as claimed in claim 8 , wherein the spectrometer is disposed outside the housing.
10. The device as claimed in claim 8 , further comprising: an evaluation unit configured to evaluate the interference spectrum for determining in each case a layer thickness (d 1 , d 2 ) of the layer applied to the substrate before and after machining the layer with the ion beam.
11. The device as claimed in claim 8 , further comprising: a light conductor for guiding illumination radiation reflected back on the test workpiece to the spectrometer disposed outside the housing.
12. The device as claimed in claim 11 , further comprising: an imaging optical unit for coupling the reflected illumination radiation into the light conductor.
13. The device as claimed in claim 8 , wherein the substrate and the layer are transparent to the illumination radiation.
14. The device as claimed in claim 8 , wherein the substrate is polished on both sides thereof.
15. The device as claimed in claim 8 , wherein the workpiece to be machined comprises a material which is identical to the material of the layer of the test workpiece.
16. The device as claimed in claim 8 , wherein the shielding has a shutter which is movable between a first, closed position and a second, opened position.