Pressure-sensitive adhesive tape for protecting semiconductor
Provided is a pressure-sensitive adhesive tape for protecting a semiconductor that can satisfactorily fill an uneven surface and is prevented from an adhesive residue. The pressure-sensitive adhesive tape for protecting a semiconductor includes: a base material; a pressure-sensitive adhesive layer arranged on at least one side of the base material; and an intermediate layer arranged between the base material and the pressure-sensitive adhesive layer, wherein a storage modulus of elasticity A (MPa) of the pressure-sensitive adhesive layer, a thickness B (μm) of the intermediate layer, a thickness C (μm) of the pressure-sensitive adhesive layer, and a tack value D (N) of the pressure-sensitive adhesive layer satisfy the formula A×(B/C)×D≥20 (MPa·N).
1. A pressure-sensitive adhesive tape for protecting a semiconductor, comprising:
a base material layer;
a pressure-sensitive adhesive layer arranged on at least one side of the base material layer; and
an intermediate layer arranged between the base material layer and the pressure-sensitive adhesive layer, wherein
a storage modulus of elasticity A (MPa) of the pressure-sensitive adhesive layer, a thickness B (μm) of the intermediate layer, a thickness C (μm) of the pressure-sensitive adhesive layer, and a tack value D (N) of the pressure-sensitive adhesive layer satisfy the following formula:
A ×( B/C )× D ≥20 (MPa·N);
the storage modulus of elasticity of the pressure-sensitive adhesive layer is from 1 MPa to 30 MPa;
the tack value at 25° Celsius of the pressure-sensitive adhesive layer is from 0.05 N to 0.5 N; and
the pressure-sensitive adhesive layer comprises an active energy ray-curable pressure-sensitive adhesive containing an acrylic polymer.
2. The pressure-sensitive adhesive tape for protecting a semiconductor according to claim 1 , wherein, when a load value is measured by thermomechanical analysis (TMA) through indentation of a probe having a diameter of 1.0 mm into the pressure-sensitive adhesive layer to an indentation depth corresponding to 80% of a total thickness of the pressure-sensitive adhesive layer and the intermediate layer, a load change amount (μN/(mm 2 sec)) from 1 second to 300 seconds after a start of the measurement is 1,600 (μN/(mm 2 sec)) or less.
3. The pressure-sensitive adhesive tape for protecting a semiconductor according to claim 1 , wherein the pressure-sensitive adhesive layer has a thickness of 2 μm to 50 μm.
4. The pressure-sensitive adhesive tape for protecting a semiconductor according to claim 1 , wherein the intermediate layer has a thickness of 50 μm to 500 μm.