High aspect ratio source or drain structures with abrupt dopant profile
Integrated circuit structures having source or drain structures with abrupt dopant profiles are described. In an example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires. A second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal nanowires. The first and second epitaxial source or drain structures include silicon, phosphorous and arsenic, with an atomic concentration of phosphorous substantially the same as an atomic concentration of arsenic.
1. An integrated circuit structure, comprising:
a vertical arrangement of horizontal nanowires;
a gate stack around the vertical arrangement of horizontal nanowires;
a first epitaxial source or drain structure at a first end of the vertical arrangement of horizontal nanowires; and
a second epitaxial source or drain structure at a second end of the vertical arrangement of horizontal nanowires, the first and second epitaxial source or drain structures comprising silicon, phosphorous and arsenic, with an atomic concentration of phosphorous substantially the same as an atomic concentration of arsenic, wherein the first and second epitaxial source or drain structures have a depth of phosphorous substantially the same as a depth of arsenic.
2. The integrated circuit structure of claim 1 , wherein the depth of phosphorous is within approximately 1 nanometer of the depth of arsenic.
3. The integrated circuit structure of claim 1 , wherein the first and second source or drain structures have a resistivity of less than approximately 0.35 mOhm·cm.
4. The integrated circuit structure of claim 1 , further comprising:
first and second dielectric gate sidewall spacers along the first and second sides of the gate stack, respectively.
5. The integrated circuit structure of claim 1 , further comprising:
a first conductive contact on the first epitaxial source or drain structure; and
a second conductive contact on the second epitaxial source or drain structure.
6. An integrated circuit structure, comprising:
a vertical arrangement of horizontal nanowires;
a gate stack around the vertical arrangement of horizontal nanowires;
a first epitaxial source or drain structure at a first end of the vertical arrangement of horizontal nanowires, the first epitaxial source or drain structure having a first portion extending laterally beyond the vertical arrangement of horizontal nanowires and having a second portion extending vertically above the vertical arrangement of horizontal nanowires, the second portion having a vertical thickness greater than a horizontal thickness of the first portion; and
a second epitaxial source or drain structure at a second end of the vertical arrangement of horizontal nanowires, the second epitaxial source or drain structure having a first portion extending laterally beyond the vertical arrangement of horizontal nanowires and having a second portion extending vertically above the vertical arrangement of horizontal nanowires, the second portion having a vertical thickness greater than a horizontal thickness of the first portion.
7. The integrated circuit structure of claim 6 , wherein the first and second epitaxial source or drain structures comprise silicon, phosphorous and arsenic, with an atomic concentration of phosphorous substantially the same as an atomic concentration of arsenic.
8. The integrated circuit structure of claim 6 , further comprising:
first and second dielectric gate sidewall spacers along the first and second sides of the gate stack, respectively.
9. The integrated circuit structure of claim 6 , further comprising:
a first conductive contact on the first epitaxial source or drain structure; and
a second conductive contact on the second epitaxial source or drain structure.
10. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a vertical arrangement of horizontal nanowires;
a gate stack around the vertical arrangement of horizontal nanowires;
a first epitaxial source or drain structure at a first end of the vertical arrangement of horizontal nanowires; and
a second epitaxial source or drain structure at a second end of the vertical arrangement of horizontal nanowires, the first and second epitaxial source or drain structures comprising silicon, phosphorous and arsenic, with an atomic concentration of phosphorous substantially the same as an atomic concentration of arsenic, wherein the first and second epitaxial source or drain structures have a depth of phosphorous substantially the same as a depth of arsenic.
11. The computing device of claim 10 , further comprising:
a memory coupled to the board.
12. The computing device of claim 10 , further comprising:
a communication chip coupled to the board.
13. The computing device of claim 10 , further comprising:
a camera coupled to the board.
14. The computing device of claim 10 , further comprising:
a battery coupled to the board.
15. The computing device of claim 10 , further comprising:
an antenna coupled to the board.
16. The computing device of claim 10 , wherein the component is a packaged integrated circuit die.
17. The computing device of claim 10 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.
18. The computing device of claim 10 , wherein the computing device is selected from the group consisting of a mobile phone, a laptop, a desk top computer, a server, and a set-top box.