IP Library Granted Patent US 12,019,506
Granted Patent B2
US 12,019,506 · App. 16/581,045 · Granted Jun 25, 2024

Imprint recovery management for memory systems

Inventors: Sukneet Singh Basuta (Meridian, ID); Shashank Bangalore Lakshman (Boise, ID); Jonathan D. Harms (Meridian, ID); Jonathan J. Strand (Boise, ID)
Assignee: Micron Technology, Inc.
G06F11/0793G06F11/0727G06F11/0751G06F11/1068G06F12/10G11C11/221G11C11/2253G11C11/2273G11C11/2275
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Quick Facts
Patent No.
US 12,019,506
App. No.
16/581,045
Granted
Jun 25, 2024
Kind
B2
Abstract

Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.

Claims (37)

1. A method, comprising:

determining that a set of memory cells included in a memory device are imprinted in respective first logic states;

indicating, to a host device coupled with the memory device, that the set of memory cells are imprinted in the respective first logic states;

receiving, from the host device, approval to perform an imprint recovery procedure on the set of memory cells, the imprint recovery procedure to increase an ability of the set of memory cells to switch between storing the respective first logic states and storing respective second logic states;

performing the imprint recovery procedure on the set of memory cells based at least in part on receiving the approval from the host device;

receiving, from the host device, an indication to pause the imprint recovery procedure; and

pausing the imprint recovery procedure based at least in part on the indication to pause.

2. A method, comprising:

determining that a set of memory cells included in a memory device are imprinted in respective first logic states;

indicating, to a host device coupled with the memory device, that the set of memory cells are imprinted in the respective first logic states;

receiving, from the host device, approval to perform an imprint recovery procedure on the set of memory cells, the imprint recovery procedure to increase an ability of the set of memory cells to switch between storing the respective first logic states and storing respective second logic states;

performing the imprint recovery procedure on the set of memory cells based at least in part on receiving the approval from the host device;

determining that a second set of memory cells included in the memory device are imprinted in respective third logic states;

determining that a severity with which the second set of memory cells are imprinted in the respective third logic states satisfies a threshold; and

performing a second imprint recovery procedure on the second set of memory cells independent of any approval from the host device.

3. A memory system, comprising: a set of memory cells of a memory device of one or more memory devices; and one or more controllers of the memory device configured to cause the memory system to:

determine that the set of memory cells included in the memory device are imprinted in respective first logic states;

indicate, to a host device coupled with the memory device, that the set of memory cells are imprinted in the respective first logic states;

receive, from the host device, approval to perform an imprint recovery procedure on the set of memory cells, the imprint recovery procedure to increase an ability of the set of memory cells to switch between storing the respective first logic states and storing respective second logic states;

perform the imprint recovery procedure on the set of memory cells based at least in part on receiving the approval from the host device;

receive, from the host device, an indication to pause the imprint recovery procedure; and

pause the imprint recovery procedure based at least in part on the indication to pause.

4. A memory system, comprising: a set of memory cells of a memory device of one or more memory devices; and one or more controllers of the memory device configured to cause the memory system to:

determine that the set of memory cells included in the memory device are imprinted in respective first logic states;

indicate, to a host device coupled with the memory device, that the set of memory cells are imprinted in the respective first logic states;

receive, from the host device, approval to perform an imprint recovery procedure on the set of memory cells, the imprint recovery procedure to increase an ability of the set of memory cells to switch between storing the respective first logic states and storing respective second logic states;

perform the imprint recovery procedure on the set of memory cells based at least in part on receiving the approval from the host device;

determine that a second set of memory cells included in the memory device are imprinted in respective third logic states;

determine that a severity with which the second set of memory cells are imprinted in the respective third logic states satisfies a threshold; and

perform a second imprint recovery procedure on the second set of memory cells independent of any approval from the host device.

5. A non-transitory computer-readable medium storing instructions executable by one or more processors to:

determine that a set of memory cells included in a memory device are imprinted in respective first logic states;

indicate, to a host device coupled with the memory device, that the set of memory cells are imprinted in the respective first logic states;

receive, from the host device, approval to perform an imprint recovery procedure on the set of memory cells, the imprint recovery procedure to increase an ability of the set of memory cells to switch between storing the respective first logic states and storing respective second logic states;

perform the imprint recovery procedure on the set of memory cells based at least in part on receiving the approval from the host device;

receive, from the host device, an indication to pause the imprint recovery procedure; and

pause the imprint recovery procedure based at least in part on the indication to pause.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2019
From: BASUTA, SUKNEET SINGH; BANGALORE LAKSHMAN, SHASHANK; HARMS, JONATHAN D.; STRAND, JONATHAN J.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 051194/0194 →
Continuity (1)
Related Publication 20210089385A1 · Mar 25, 2021
Cited By (1)
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