Semiconductor device with air gaps and method for fabricating the same
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a plurality of plugs positioned above the substrate, a plurality of air gaps positioned adjacent to the plurality of plugs, and a plurality of capacitor structures positioned above the substrate.
1. A semiconductor device, comprising:
a substrate;
a plurality of plugs positioned above the substrate;
a plurality of air gaps positioned adjacent to the plurality of plugs;
a plurality of capacitor structures positioned above the substrate; and
comprising a plurality of holding structures positioned adjacent to the plurality of plugs;
wherein the plurality of air gaps are positioned above the plurality of holding structures.
2. The semiconductor device of claim 1 , wherein the plurality of holding structures comprise a plurality of top holding structures positioned below the plurality of air gaps, a plurality of middle holding structures positioned below the plurality of top holding structures, and a plurality of bottom holding structures positioned below the plurality of middle holding structures.
3. The semiconductor device of claim 2 , further comprising a plurality of word lines, wherein the plurality of word lines extend along a first direction.
4. The semiconductor device of claim 3 , wherein adjacent pairs of the plurality of middle holding structures are joined to each other along the first direction.
5. The semiconductor device of claim 4 , further comprising a plurality of spacers positioned between the plurality of air gaps and the plurality of plugs.
6. The semiconductor device of claim 5 , wherein the plurality of word lines comprise a plurality of word line insulating layers inwardly positioned in the substrate, a plurality of word line electrodes positioned on the plurality of word line insulating layers, and a plurality of word line capping layers positioned on the plurality of word line electrodes.
7. The semiconductor device of claim 5 , further comprising a plurality of bit lines positioned above the substrate and extending along a second direction, wherein the second direction is perpendicular to the first direction.
8. The semiconductor device of claim 7 , wherein the plurality of bit lines are formed as undulating strips.
9. The semiconductor device of claim 7 , further comprising a plurality of bit line contacts positioned below the plurality of bit lines.
10. The semiconductor device of claim 5 , wherein the plurality of capacitor structures comprise a plurality of capacitor bottom electrodes inwardly positioned above the plurality of plugs, a capacitor insulating layer positioned on the plurality of capacitor bottom electrodes, and a capacitor top electrode positioned on the capacitor insulating layer.
11. A method for fabricating a semiconductor device, comprising:
providing a substrate;
forming a plurality of plugs positioned above the substrate;
forming a plurality of air gaps positioned adjacent to the plurality of plugs;
forming a plurality of capacitor structures positioned above the substrate; and
forming a plurality of holding structures positioned adjacent to the plurality of plugs;
wherein the plurality of air gaps are positioned above the plurality of holding structures.
12. The method for fabricating the semiconductor device of claim 11 , wherein the plurality of holding structures comprise a plurality of top holding structures positioned below the plurality of air gaps, a plurality of middle holding structures positioned below the plurality of top holding structures, and a plurality of bottom holding structures positioned below the plurality of middle holding structures.
13. The method for fabricating the semiconductor device of claim 12 , further comprising forming a plurality of word lines positioned above the substrate, wherein the plurality of word lines extend along a first direction.
14. The method for fabricating the semiconductor device of claim 13 , wherein adjacent pairs of the plurality of middle holding structures are joined to each other along the first direction.
15. The method for fabricating the semiconductor device of claim 14 , further comprising a plurality of spacers positioned between the plurality of air gaps and the plurality of plugs.
16. The method for fabricating the semiconductor device of claim 15 , wherein the plurality of word lines comprise a plurality of word line insulating layers inwardly positioned in the substrate, a plurality of word line electrodes positioned on the plurality of word line insulating layers, and a plurality of word line capping layers positioned on the plurality of word line electrodes.