High voltage generation using reconfigurable photodiodes in pixel array

1. An imaging sensor, comprising:

a pixel array, each pixel of the pixel array containing a photodiode, each photodiode being isolated by a deep trench isolation;

mode selection circuitry configured to control which groups of pixels of the pixel array operate in an imaging mode and which other groups of pixels of the pixel array operate in an energy harvesting mode; and

switch circuitry configured to selectively connect different groups of photodiodes in rows operating in the energy harvesting mode into forward biased series configurations between a voltage output line and a ground line, or into forward biased parallel configurations between the voltage output line and the ground line;

wherein the switch circuitry connects a given group of photodiodes into the forward biased series configuration by directly electrically connecting an anode of a first photodiode of the given group to the voltage output line, directly electrically connecting an anode of a second photodiode of the given group to a cathode of the first photodiode of the given group, directly electrically connecting an anode of a third photodiode of the given group to a cathode of the second photodiode of the given group, directly electrically connecting an anode of a fourth photodiode of the given group to a cathode of the third photodiode of the given group, and directly electrically connecting a cathode of the fourth photodiode of the given group to the ground line.

2. The imaging sensor of claim 1 , wherein the switch circuitry connects a given group of photodiodes into the forward biased series configuration by connecting an anode of a first photodiode of the given group to the voltage output line, connecting an anode of a second photodiode of the given group to a cathode of the first photodiode of the given group, connecting an anode of a third photodiode of the given group to a cathode of the second photodiode of the given group, connecting an anode of a fourth photodiode of the given group to a cathode of the third photodiode of the given group, and connecting a cathode of the fourth photodiode of the given group to the ground line.

3. The imaging sensor of claim 1 , wherein the switch circuitry connects a given group of photodiodes into the forward biased parallel configuration by connecting an anode of a first photodiode of the given group to the voltage output line, connecting an anode of a second photodiode of the given group to a cathode of the first photodiode of the given group, connecting a cathode of the second photodiode of the given group to the ground line, connecting an anode of a third photodiode of the given group to the voltage output line, connecting an anode of a fourth photodiode of the given group to a cathode of the third photodiode of the given group, and connecting a cathode of the fourth photodiode of the given group to the ground line.

4. The imaging sensor of claim 1 , wherein the switch circuitry connects a given group of photodiodes into the forward biased parallel configuration by connecting an anode of a first photodiode of the given group to the voltage output line and connecting a cathode of the first photodiode of the given group to the ground line, connecting an anode of a second photodiode of the given group to the voltage output line and connecting a cathode of the second photodiode of the given group to the ground line, connecting an anode of a third photodiode of the given group to the voltage output line and connecting a cathode of the third photodiode of the given group to the ground line, and connecting an anode of a fourth photodiode of the given group to the voltage output line and connecting a cathode of the fourth photodiode of the given group to the ground line.

5. The imaging sensor of claim 1 , wherein the switch circuitry is configured to connect at least one group of photodiodes in rows operating in the energy harvesting mode into the forward biased series configuration and to connect at least one group of photodiodes in rows operating in the energy harvesting mode into the forward biased parallel configuration.

6. The imaging sensor of claim 1 , wherein each group of photodiodes is comprised of four photodiodes.

7. The imaging sensor of claim 1 , wherein each row of photodiodes is selectively switchable between the imaging mode and the energy harvesting mode.

8. The imaging sensor of claim 1 ,

wherein the mode selection circuitry comprises, for each first pixel of a given group of pixels, an imaging selection transistor coupling an anode of the photodiode of that pixel to ground when in the imaging mode and an energy harvesting selection transistor coupling a cathode of the photodiode of that pixel to ground when in the energy harvesting mode; and

wherein the mode selection circuitry comprises, for each pixel of the given pixel group other than the first pixel of the given pixel group, an imaging selection transistor coupling an anode of the photodiode of that pixel to ground when in the imaging mode and an energy harvesting selection transistor coupling a cathode of the photodiode of that pixel to the switch circuitry for that pixel when in the energy harvesting mode.

9. The imaging sensor of claim 8 , wherein the switch circuitry comprises, for each pixel of the given pixel group except a last pixel of the given pixel group:

a transmission gate selectively coupling the anode of the photodiode of that pixel to the energy harvesting selection transistor of a next pixel of the given pixel group; and

a selection transistor selectively coupling the energy harvesting selection transistor of the next pixel of the given pixel group to ground when the transmission gate is not coupling the anode of the photodiode of that pixel to the energy harvesting selection transistor of the next pixel of the given pixel group.

10. An imaging sensor, comprising:

an array of pixels, the array of pixels subdivided into a plurality of pixel group rows, each of the plurality of pixel group rows being subdivided into a plurality of pixel groups, wherein each pixel group of the plurality of pixel groups comprises:

a first pixel comprising:

a first photodiode; and

mode selection circuitry coupling an anode of the first photodiode to ground when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in an imaging mode and directly electrically connecting a cathode of the first photodiode to ground when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in an energy harvesting mode;

interconnection circuitry coupled between the pixel group of the plurality of pixel groups and an output line; and

a last pixel comprising:

a last photodiode; and

mode selection circuitry coupling a cathode of the last photodiode to ground when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the energy harvesting mode and the last pixel is in an isolated mode, coupling the cathode of the last photodiode to the interconnection circuitry when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the energy harvesting mode and the last pixel is in an interconnected mode, and coupling an anode of the last photodiode to ground when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the imaging mode.

11. The imaging sensor of claim 10 , wherein the mode selection circuitry of the first pixel comprises:

a first n-channel transistor having a source directly electrically connected to ground, a drain directly electrically connected to the anode of the first photodiode, and a gate coupled to an imaging selection signal that is asserted when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the imaging mode; and

a second n-channel transistor having a source directly electrically connected to ground, a drain directly electrically connected to the cathode of the first photodiode, and a gate coupled to an energy harvesting selection signal that is asserted when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the energy harvesting mode.

12. The imaging sensor of claim 11 , wherein each pixel group of the plurality of pixel groups further comprises:

a second pixel comprising:

a second photodiode; and

mode selection circuitry coupling an anode of the second photodiode to ground when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the imaging mode, coupling the anode of the second photodiode to ground when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the energy harvesting mode and the second pixel is in an isolated mode, and coupling the anode of the second photodiode to the interconnection circuitry when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the energy harvesting mode and the second pixel is in an interconnected mode,

wherein the mode selection circuitry comprises:

a third n-channel transistor having a source coupled to ground, a drain coupled to the anode of the second photodiode, and a gate coupled to the imaging selection signal; and

a fourth n-channel transistor having a source coupled to the interconnection circuitry, a drain coupled to the cathode of the second photodiode, and a gate coupled to the energy harvesting selection signal.

13. The imaging sensor of claim 12 , wherein the interconnection circuitry comprises:

a first transmission gate coupled between the anode of the first photodiode and the source of the fourth n-channel transistor, the first transmission gate operating based upon a result of a logical OR operation performed on a second control signal and a third control signal;

a fifth n-channel transistor having a source coupled to ground, a drain coupled to the source of the fourth n-channel transistor, and a gate coupled to a first control signal; and

a first transistor having a source coupled to the output line, a drain coupled to the anode of the first photodiode, and a gate coupled to the first control signal.

14. The imaging sensor of claim 13 , wherein each pixel group of the plurality of pixel groups further comprises:

a third pixel comprising:

a third photodiode; and

mode selection circuitry coupling an anode of the third photodiode to ground when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the imaging mode, coupling the anode of the third photodiode to ground when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the energy harvesting mode and the third pixel is in an isolated mode, and coupling the anode of the third photodiode to the interconnection circuitry when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in the energy harvesting mode and the third pixel is in an interconnected mode,

wherein the mode selection circuitry comprises:

a sixth n-channel transistor having a source coupled to ground, a drain coupled to the anode of the third photodiode, and a gate coupled to the imaging selection signal; and

a seventh n-channel transistor having a source coupled to the interconnection circuitry, a drain coupled to the cathode of the third photodiode, and a gate coupled to the energy harvesting selection signal.

15. The imaging sensor of claim 14 , wherein the interconnection circuitry further comprises:

a second transmission gate coupled between the anode of the second photodiode and the source of the seventh n-channel transistor, the second transmission gate operating based upon the third control signal;

an eighth n-channel transistor having a source coupled to ground, a drain coupled to the source of the seventh n-channel transistor, and a drain coupled to a result of the logical OR operation performed on the first control signal and the second control signal; and

a second transistor having a source coupled to the output line, a drain coupled to the anode of the second photodiode, and a gate coupled to the result of the logical OR operation performed on the first control signal and the second control signal.

16. The imaging sensor of claim 15 , wherein the mode selection circuitry of the last pixel comprises:

a ninth n-channel transistor having a source coupled to ground, a drain coupled to the anode of the last photodiode, and a gate coupled to the imaging selection signal; and

a tenth n-channel transistor having a drain coupled to the cathode of the last photodiode, a source coupled to the interconnection circuitry, and a gate coupled to the energy harvesting selection signal.

17. The imaging sensor of claim 16 , wherein the interconnection circuitry further comprises:

a third transistor having a source coupled to the output line, a drain coupled to the anode of the third photodiode, and a gate coupled to the first control signal;

a third transmission gate coupled between the anode of the third photodiode and the source of the tenth n-channel transistor, the third transmission gate operating based upon the result of the logical OR operation performed on the second control signal and the third control signal;

an eleventh n-channel transistor having a drain coupled to the source of the tenth n-channel transistor, a source coupled to ground, and a gate coupled to the first control signal; and

a fourth transistor having a source coupled to the output line, a drain coupled to the anode of the last photodiode, and a gate coupled to a result of a logical OR operation performed on the first control signal, second control signal, and third control signal.

18. An imaging sensor, comprising:

an array of pixels, the array of pixels subdivided into a plurality of pixel group rows, each of the plurality of pixel group rows being subdivided into a plurality of pixel groups, wherein each pixel group of the plurality of pixel groups comprises:

a first pixel comprising:

a first photodiode having a cathode and an anode; and

mode selection circuitry comprising:

a first n-channel transistor having a source coupled to ground, a drain coupled to the anode of the first photodiode, and a gate coupled to an imaging selection signal that is asserted when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in an imaging mode; and

a second n-channel transistor having a source coupled to ground, a drain coupled to the cathode of the first photodiode, and a gate coupled to an energy harvesting selection signal that is asserted when the pixel group row of the plurality of pixel group rows to which the pixel group of the plurality of pixel groups belongs is in an energy harvesting mode;

interconnection circuitry coupled between the pixel group of the plurality of pixel groups and an output line; and

a second pixel comprising:

a second photodiode having an anode and a cathode; and

mode selection circuitry comprising:

a third n-channel transistor having a source coupled to ground, a drain coupled to the anode of the second photodiode, and a gate coupled to the imaging selection signal; and

a fourth n-channel transistor having a source coupled to the interconnection circuitry, a drain coupled to the cathode of the second photodiode, and a gate coupled to the energy harvesting selection signal;

wherein the interconnection circuitry comprises:

a first transmission gate coupled between the anode of the first photodiode and the source of the fourth n-channel transistor, the first transmission gate operating based upon a result of a logical OR operation performed on a second control signal and a third control signal;

a fifth n-channel transistor having a source coupled to ground, a drain coupled to the source of the fourth n-channel transistor, and a gate coupled to a first control signal; and

a first transistor having a source coupled to the output line, a drain coupled to the anode of the first photodiode, and a gate coupled to the first control signal.

19. The imaging sensor of claim 18 , wherein each pixel group of the plurality of pixel groups further comprises:

a third pixel comprising:

a third photodiode having an anode and a cathode; and

mode selection circuitry comprising:

a sixth n-channel transistor having a source coupled to ground, a drain coupled to the anode of the third photodiode, and a gate coupled to the imaging selection signal; and

a seventh n-channel transistor having a source coupled to the interconnection circuitry, a drain coupled to the cathode of the third photodiode, and a gate coupled to the energy harvesting selection signal.

20. The imaging sensor of claim 19 , wherein the interconnection circuitry further comprises:

a second transmission gate coupled between the anode of the second photodiode and the source of the seventh n-channel transistor, the second transmission gate operating based upon the third control signal;

an eighth n-channel transistor having a source coupled to ground, a drain coupled to the source of the seventh n-channel transistor, and a drain coupled to a result of the logical OR operation performed on the first control signal and the second control signal; and

a second transistor having a source coupled to the output line, a drain coupled to the anode of the second photodiode, and a gate coupled to the result of the logical OR operation performed on the first control signal and the second control signal.

21. The imaging sensor of claim 20 , wherein each pixel group of the plurality of pixel groups further comprises:

a last pixel comprising:

a last photodiode having an anode and a cathode; and

mode selection circuitry comprising:

a ninth n-channel transistor having a source coupled to ground, a drain coupled to the anode of the last photodiode, and a gate coupled to the imaging selection signal; and

a tenth n-channel transistor having a drain coupled to the cathode of the last photodiode, a source coupled to the interconnection circuitry, and a gate coupled to the energy harvesting selection signal.

22. The imaging sensor of claim 21 , wherein the interconnection circuitry further comprises:

a third transistor having a source coupled to the output line, a drain coupled to the anode of the third photodiode, and a gate coupled to the first control signal;

a third transmission gate coupled between the anode of the third photodiode and the source of the tenth n-channel transistor, the third transmission gate operating based upon the result of the logical OR operation performed on the second control signal and the third control signal;

an eleventh n-channel transistor having a drain coupled to the source of the tenth n-channel transistor, a source coupled to ground, and a gate coupled to the first control signal; and

a fourth transistor having a source coupled to the output line, a drain coupled to the anode of the last photodiode, and a gate coupled to a result of a logical OR operation performed on the first control signal, second control signal, and third control signal.