Apparatus and method for production and encapsulation of small particles and thin wires
A method of forming one of a plurality of encapsulated crystalline particles includes feeding a coaxial feed wire downwardly such that a first wire end of the coaxial feed wire is positioned at a heating source. The coaxial feed wire includes a crystalline wire core, and an amorphous shell surrounding the crystalline wire core. The first end of the coaxial feed wire is heated at the heating source, thereby forming a molten pendant drop at the first wire end. The plurality of encapsulated crystalline particles are emitted from the molten pendant drop onto a collector located below the molten pendant drop.
1. A method of forming one of a plurality of particles, comprising:
feeding a microwire such that a first wire end of the microwire is disposed at a heating source;
heating the first end of the microwire at the heating source, thereby forming a molten pendant drop at the first wire end;
positioning a flow of sheath gas around the microwire upstream of the heating source; and
emitting the plurality of particles from the molten pendant drop;
wherein the microwire includes:
a crystalline wire core; and
an amorphous shell surrounding the crystalline wire core.
2. The method of claim 1 , wherein the plurality of particles are one or more encapsulated crystalline core particles.
3. The method of claim 2 , wherein the one or more encapsulated crystalline core particles are less than 1 mm in diameter.
4. The method of claim 1 , wherein the heating source heats the microwire by one or more of resistive heating, induction heating, torch heating, laser heating, microwave heating, electron beam heating, or plasma heating.
5. The method of claim 1 , further comprising positioning an electrode beneath the molten pendant drop.
6. The method of claim 5 , further comprising connecting a second wire end of the microwire opposite the first wire end to a voltage source.
7. The method of claim 6 , wherein the voltage source applies a voltage in a range of −100 kV˜100 kV across the microwire and the electrode.
8. A method of forming one of a plurality of wires, comprising:
feeding a microwire such that a first wire end of the microwire is disposed at a heating source;
heating the first end of the microwire at the heating source, thereby forming a molten pendant drop at the first wire end; and
positioning a flow of sheath gas around the microwire upstream of the heating source; and
emitting the plurality of wires from the molten pendant drop.
9. The method of claim 8 , wherein the microwire has a crystalline wire core; and an amorphous shell surrounding the crystalline wire core.
10. The method of claim 8 , further comprising positioning an electrode beneath the molten pendant drop.
11. The method of claim 10 , further comprising connecting a second wire end of the microwire opposite the first wire end to a voltage source.
12. The method of claim 11 , wherein the voltage source applies a voltage in a range of −100 kV˜100 kV across the microwire and the electrode.
13. The method of claim 8 , wherein the plurality of wires are one or more encapsulated thin crystalline core wires.
14. The method of claim 13 , wherein the encapsulated thin crystalline core wires are less than 100 μm in diameter.
15. The method of claim 8 , wherein the heating source heats the microwire by one or more of resistive heating, induction heating, torch heating, laser heating, microwave heating, electron beam heating, or plasma heating.