Selective and self-limiting tungsten etch process
Methods of dep-etch in semiconductor devices (e.g. V-NAND) are described. A metal layer is deposited in a feature. The metal layer is removed by low temperature atomic layer etching by oxidizing the surface of the metal layer and etching the oxide in a layer-by-layer fashion. After removal of the metal layer, the features are filled with a metal.
1. A processing method comprising:
depositing a conformal liner in at least one feature on a substrate;
wherein the conformal liner comprises one or more of titanium nitride (TiN) or tantalum nitride (TaN);
depositing a metal layer on the conformal liner in the least one feature, the metal layer comprising a metal;
oxidizing the metal to a first depth to form a metal oxide layer on the metal layer; and
etching the metal oxide layer to selectively remove the metal oxide layer.
2. The method of claim 1 , wherein the metal comprises one or more of tungsten (W), titanium (Ti), tantalum (Ta), nickel (Ni), cobalt (Co), or molybdenum (Mo).
3. The method of claim 2 , wherein the metal comprises tungsten (W).
4. The method of claim 1 , wherein the metal oxide layer comprises tungsten oxide (WO).
5. The method of claim 1 , wherein oxidizing the metal occurs at a temperature greater than or equal to 400° C.
6. The method of claim 1 , wherein etching the metal oxide layer occurs at a temperature in a range of about 100° C. to about 500° C.
7. The method of claim 1 , wherein etching the metal oxide comprises exposing the metal oxide to a metal halide etchant.
8. The method of claim 7 , wherein the metal halide etchant comprises one or more of WF 6 , WCl 5 , WCl 6 , or tungsten oxyhalide.
9. A processing method comprising:
depositing a metal layer on a substrate surface, the substrate surface having at least one feature thereon, the at least one feature extending a feature depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall, wherein the metal layer is deposited on the substrate surface, the first sidewall, the second sidewall, and the bottom surface of the at least one feature; and
performing a process cycle comprising oxidizing the metal to a first depth for form a metal oxide layer on the metal layer, and etching the metal oxide layer to selectively remove the metal oxide layer.
10. The method of claim 9 , wherein the metal comprises tungsten (W) and the metal oxide layer comprises tungsten oxide (WO).
11. The method of claim 9 , further comprising depositing a conformal liner in the at least one feature prior to depositing the metal layer, wherein the conformal liner comprises one or more of titanium nitride (TiN) or tantalum nitride (TaN).
12. The method of claim 9 , wherein oxidizing the metal occurs at a temperature greater than or equal to 400° C.
13. The method of claim 9 , wherein etching the metal oxide layer occurs at a temperature in a range of about 100° C. to about 500° C.
14. The method of claim 9 , wherein etching the metal oxide comprises exposing the metal oxide to a metal halide etchant comprising one or more of WF 6 , WCl 5 , WCl 6 , or tungsten oxyhalide.
15. The method of claim 9 , further comprising repeating the process cycle n number of times.
16. The method of claim 9 , wherein oxidizing the metal layer comprises exposing a surface of the metal layer to oxygen (O 2 ).
17. The method of claim 9 , wherein the substrate comprises a plurality of alternating oxide and nitride layers.
18. A method of processing a substrate, the method comprising:
forming a film stack on a substrate, the film stack comprising a plurality of alternating layers of an oxide material and a nitride material and the film stack have a stack thickness;
forming an opening extending a depth from a top of the film stack surface to a bottom surface, the opening having a width defined by a first sidewall and a second sidewall;
optionally forming a barrier layer on the film stack surface, and on the first sidewall, the second sidewall, and the bottom surface of the opening, the barrier layer comprising TiN with a thickness in the range of about 20 Å to about 50 Å;
depositing a metal layer on the film stack so that the metal layer fills the opening and covers the top of the film stack with a metal layer thickness; and
repeatedly oxidizing the surface of the metal layer to form a metal oxide layer and etching the metal oxide layer from the at least one feature until the metal layer is removed, oxidizing the surface comprising exposure to O 2 and etching the metal layer oxide comprising exposure to a halide etchant.