Radar assembly with ultra wide band waveguide to substrate integrated waveguide transition
A radar assembly includes a rectangular-waveguide (RWG) and a printed-circuit-board. The rectangular-waveguide (RWG) propagates electromagnetic energy in a transverse electric mode (TE 10 ) and in a first direction. The printed-circuit-board includes a plurality of conductor-layers oriented parallel to each other. The printed-circuit-board defines a substrate-integrated-waveguide (SIW) that propagates the electromagnetic energy in a transverse electric mode (TE 10 ) and in a second direction perpendicular to the first direction, and defines a transition that propagates the electromagnetic energy between the rectangular-wave-guide and the substrate-integrated-waveguide. The transition includes apertures defined by at least three of the plurality of conductor-layers.
1. An assembly comprising:
a rectangular-waveguide (RWG) that propagates electromagnetic energy in a first direction;
a substrate-integrated-waveguide (SIW) that propagates the electromagnetic energy in a second direction perpendicular to the first direction; and
a transition that propagates the electromagnetic energy between the RWG and the SIW,
wherein the SIW and the transition are defined by a printed-circuit-board that includes a plurality of conductor-layers.
2. The assembly of claim 1 , wherein the RWG propagates the electromagnetic energy in a transverse-electric mode.
3. The assembly of claim 2 , wherein the transverse-electric mode is a TE 10 mode.
4. The assembly of claim 1 , wherein the SIW propagates the electromagnetic energy in a transverse-electric mode.
5. The assembly of claim 4 , wherein the transverse-electric mode is a TE 10 mode.
6. The assembly of claim 1 , wherein the plurality of conductor-layers includes eight conductor layers.
7. The assembly of claim 1 , wherein the plurality of conductor-layers are oriented parallel to each other.
8. The assembly of claim 1 , wherein the transition includes a plurality of apertures defined in a portion of the plurality of conductor-layers.
9. The assembly of claim 8 , wherein the plurality of apertures are defined by at least three of the plurality of conductor-layers.
10. The assembly in accordance with claim 8 , wherein a first layer of the portion of the plurality of conductor-layers is adjacent to the RWG.
11. The assembly in accordance with claim 10 , wherein the first layer defines a first aperture of the plurality of apertures having a first-size.
12. The assembly in accordance with claim 11 , wherein a last layer of the portion of the plurality of conductor-layers is adjacent to the SIW.
13. The assembly in accordance with claim 12 , wherein the last layer defines a first horizontal-boundary of the SIW.
14. The assembly in accordance with claim 13 , wherein one of the plurality of conductor-layers defines a second horizontal-boundary of the SIW opposite the first horizontal-boundary.
15. The assembly in accordance with claim 14 , wherein the second horizontal-boundary defines a slot-radiator configured to couple the electromagnetic energy from the SIW to an antenna.
16. The assembly in accordance with claim 12 , wherein the last layer defines a last aperture of the plurality of apertures having a last-size greater than the first-size.
17. The assembly in accordance with claim 16 , wherein at least one intermediate layer is located between the first layer and the last layer of the transition.
18. The assembly in accordance with claim 17 , wherein the at least one intermediate layer defines an intermediate aperture having an intermediate-size smaller than the last-size and larger than the first-size.
19. The assembly in accordance with claim 12 , wherein the transition includes a short wall.
20. The assembly in accordance with claim 19 , wherein the short wall defines a vertical-boundary of the transition.
21. The assembly in accordance with claim 20 , wherein the vertical-boundary extends between the first layer and the last layer of the transition.
22. The assembly in accordance with claim 19 , wherein the short wall is formed of an arrangement of vias.