Micro-LED device

1. A light emitting diode (LED), comprising:

a mesa structure;

a light emitting source within the mesa structure; and

a primary emission surface on a side of the LED opposed to a top of the mesa structure;

wherein the light emitting source is configured to emit light in multiple directions anisotropically, more light is emitted from the light emitting source in directions parallel to the primary emission surface than in other directions.

2. The LED of claim 1 , wherein the light emitting source emits the light in a plane of quantum wells of the light emitting source.

3. The LED of claim 1 , wherein a greater proportion of the light from the light emitting source is incident upon an inner reflective surface of the mesa structure and a smaller proportion of the light from the light emitting source contributes to internal scattering and loss.

4. The LED of claim 1 , wherein more than 80% of the of the light from the light emitting source is emitted in the directions parallel to the primary emission surface.

5. The LED of claim 1 , wherein more than 90% of the of the light from the light emitting source is emitted in the directions parallel to the primary emission surface.

6. The LED of claim 1 , wherein:

the light emitting source includes quantum wells embedded in a first material;

the LED further includes cladding regions of a second material surrounding the light emitting source; and

the first material includes a lower refractive index than the second material.

7. The LED of claim 1 , wherein the light emitting source includes polar, semi-polar and non-polar planes.

8. The LED of claim 1 , wherein the light emitting source includes a semiconductor material with dipole anisotropy.

9. The LED of claim 1 , further comprising an additive layer on the primary emission surface that attenuates incident light above a critical angle.

10. The LED of claim 1 , further comprising an additive layer on the primary emission surface that attenuates incident light above a given wavelength.

11. The LED of claim 1 , further comprising at least one of a wavelength bandpass filter, a high-pass filter, a low-pass filter, a reflecting filter, or an antireflecting filter on the primary emission surface.

12. The LED of claim 1 , wherein the mesa structure is parabolic.

13. The LED of claim 12 , wherein the mesa structure includes a truncated top.

14. The LED of claim 1 , further comprising a reflective surface located in a region from the light emitting source to the primary emission surface.

15. The LED of claim 14 , wherein the reflective surface is the primary emission surface.

16. The LED of claim 14 , wherein reflective surface has a roughness Ra less than 300 nm.

17. The LED of claim 14 , wherein the reflective surface is an interface between a first material having a first refractive index and a second material having a second refractive index.

18. The LED of claim 17 , wherein the first material comprises an epilayer and the second material comprises a substrate upon which the LED is fabricated.

19. The LED of claim 17 , wherein the LED is formed from GaN on a sapphire substrate, and wherein the interface between the first and second materials is the interface between the GaN and the sapphire substrate.

20. A display device, comprising:

a light emitting diode (LED), including:

a mesa structure;

a light emitting source within the mesa structure; and

a primary emission surface on a side of the LED opposed to a top of the mesa structure;

wherein the light emitting source is configured to emit light in multiple directions anisotropically, more light is emitted from the light emitting source in directions parallel to the primary emission surface than in other directions.