Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; removing part of the first fin-shaped structure to form a first trench; forming a dielectric layer in the first trench, wherein the dielectric layer comprises silicon oxycarbonitride (SiOCN); and planarizing the dielectric layer to form a first single diffusion break (SDB) structure.
1. A method for fabricating semiconductor device, comprising:
providing a substrate having a first region and a second region;
forming a first fin-shaped structure on the first region;
removing part of the first fin-shaped structure to form a first trench;
forming a dielectric layer in the first trench, wherein the dielectric layer comprises silicon oxycarbonitride (SiOCN); and
planarizing the dielectric layer to form a first single diffusion break (SDB) structure.
2. The method of claim 1 , further comprising:
forming the first fin-shaped structure on the first region and a second fin-shaped structure on the second region;
removing part of the first fin-shaped structure and part of the second fin-shaped structure to form the first trench and a second trench;
forming the dielectric layer in the first trench and the second trench; and
planarizing the dielectric layer to form the first SDB structure and a second SDB structure.
3. The method of claim 2 , further comprising forming a liner in the first trench and the second trench before forming the dielectric layer.
4. The method of claim 3 , wherein the liner and the dielectric layer comprise different materials.
5. The method of claim 3 , wherein the liner comprises silicon oxide.
6. The method of claim 2 , further comprising:
forming a first gate structure on the first SDB structure and the first fin-shaped structure and a second gate structure on the second SDB structure and the second fin-shaped structure;
forming a first source/drain region adjacent to the first gate structure and a second source/drain region adjacent to the second gate structure; and
performing a replacement metal gate (RMG) process to transform the first gate structure and the second gate structure into a first metal gate and a second metal gate.
7. The method of claim 2 , wherein each of the first fin-shaped structure and the second fin-shaped structure is disposed extending along a first direction and the first SDB structure and the second SDB structure are disposed extending along a second direction.
8. The method of claim 7 , wherein the first direction is orthogonal to the second direction.
9. The method of claim 1 , wherein a concentration proportion of oxygen in SiOCN is between 30% to 60%.
10. The method of claim 1 , wherein a stress of the first SDB structure is between 100 MPa to −500 MPa.