Light emitting device and phosphor
An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.
1. A light-emitting device comprising:
a semiconductor light-emitting element that emits ultraviolet light or visible light; and
a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region,
wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 780 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm, and
wherein the phosphor that emits light in the infrared region is represented by the following Formula (1)
(M1 1-b M2 b )(M3 1-d M4 d ) 12 O 19 (1),
where
M1 represents one or more metal elements selected from alkaline earth metal elements other than Mg;
M2 represents one or more metal elements selected from rare earth metal elements other than Se;
M3 represents two or more metal elements comprising at least Ga and Al, and comprising one or more metal elements selected from Mg, Zn, B, In, Sc, Si, Ge, Ti, Sn, Zr, and Hf;
M4 represents one or more metal elements selected from Cr, Mn, Fe, Ni, and Cu;
O represents oxygen; and
0≤b≤1 and 0<d≤0.5.
2. The light-emitting device according to claim 1 , wherein the phosphor that emits light in the infrared region consists of a phosphor having an afterglow time which is the time taken for the emission peak intensity to fall to 1/10 of the initial emission peak intensity of 10 ms or less.
3. The light-emitting device according to claim 1 , wherein the phosphor that emits light in the infrared region consists of a phosphor having a reflectance at a wavelength from 700 to 850 nm of 80% or more.
4. The light-emitting device according to claim 3 , wherein the phosphor that emits light in the infrared region has a reflectance at a wavelength from 700 to 850 nm higher than a reflectance at a wavelength from 300 to 700 nm by 20% or more.
5. The light-emitting device according to claim 1 , wherein the phosphor that emits light in the infrared region comprises at least Cr as an activator element.
6. The light-emitting device according to claim 1 , wherein the phosphor that emits light in the infrared region comprises at least Eu 2+ or Sm 2+ as an activator element.
7. The light-emitting device according to claim 1 , wherein the phosphor that emits light in the infrared region has a magnet plumbite structure as a crystal phase.
8. A light-emitting device comprising:
a semiconductor light-emitting element that emits ultraviolet light or visible light; and
a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region,
wherein the half width of an emission peak waveform of the phosphor is more than 50 um; and
wherein the phosphor emitting in the infrared region comprises a crystal phase of a chemical composition represented by the following Formula (2) and having an emission peak wavelength in a wavelength range of 750 um to 1,050 nm;
(A1 1-a A2 a )(A3 1-c A4 c ) 12 O 19 (2)
where
Al represents one or more metal elements selected from alkaline earth metal elements other than Mg;
A2 represents one or more metal elements selected from rare earth metal elements other than Sc;
A3 represents one or more metal elements comprising at least Al;
A4 represents one or more metal elements selected from Cr, Mn, Fe, Ni, and Cu;
O represents oxygen; and
0≤a≤1 and 0<c≤0.5.
9. The light-emitting device according to claim 8 , wherein the metal element A3 in the Formula (2) further comprises one or more metal elements selected from Mg, Zn, B, Ga, La, Se, Si, Ge, Zr, and Hf.
10. The light-emitting device according to claim 8 , wherein the metal element A3 in the Formula (2) comprises Al and Ga.
11. The light-emitting device according to claim 8 , wherein 0<a≤1 in the Formula (2).
12. The light-emitting device according to claim 8 , wherein the metal element A2 in the Formula (2) comprises at least Tm.
13. The light-emitting device according to claim 8 , wherein the metal element Al in the Formula (2) comprises at least Ca or Sr.
14. The light-emitting device according to claim 8 , wherein the metal element A4 in the Formula (2) comprises at least Cr.
15. The light-emitting device according to claim 8 , wherein the phosphor has an afterglow time which is the time taken for the emission peak intensity to fall to 1/10 of the initial emission peak intensity of 10 ms or less.
16. An image recognition apparatus comprising:
a semiconductor light-receiving element having a spectral sensitivity at a wavelength range of 750 to 1,050 nm; and
the light-emitting device according to claim 1 .
17. An image recognition apparatus comprising:
a semiconductor light-receiving element having a spectral sensitivity at a wavelength range of 750 to 1,050 nm; and
the light-emitting device according to claim 8 .
18. An analysis apparatus analyzing blood and/or food and comprising:
a semiconductor light-receiving element having a spectral sensitivity at a wavelength range of 750 to 1,050 nm; and
the light-emitting device according to claim 1 .
19. An analysis apparatus analyzing blood and/or food and comprising:
a semiconductor light-receiving element having a spectral sensitivity at a wavelength range of 750 to 1,050 nm; and
the light-emitting device according to claim 8 .