Method and apparatus for controlling a processing reactor

1. A system for processing a substrate, comprising:

a processing chamber configured to process a substrate based on a recipe;

a plurality of sub-systems in operable communication with the processing chamber for controlling a plurality of different parameters associated with processing the substrate; and

a controller in operable communication, via a common ethernet for control automation technology (ECAT) interface, with the processing chamber and each of the plurality of sub-systems and configured to control each of the plurality of sub-systems and the processing chamber using information included in the recipe and feedback provided by each of the plurality of sub-systems,

wherein the controller is configured to compare the information included in the recipe and the feedback provided by each of the plurality of sub-systems with stored empirical information relating to the recipe and each of the plurality of sub-systems, and adjust at least one parameter of the plurality of different parameters associated with processing the substrate based on a determined comparison,

wherein the stored empirical information comprises an RF power setpoint at a step transition, and

wherein, during processing of the substrate, when the controller detects a change in RF power at the step transition, the controller adjusts a pressure, which has the same step transition as the RF power setpoint step transition, to compensate for the change in RF power at the step transition and prevent pressure overshoot in the processing chamber.

2. The system of claim 1 , wherein the processing chamber is configured to perform at least one of a physical vapor deposition process, an electrochemical deposition process, a chemical vapor deposition process, an atomic layer deposition process, a chemical mechanical polishing process, and an etching process.

3. The system of claim 1 , wherein the plurality of sub-systems includes at least one of a power sub-system, a temperature sub-system, a pressure sub-system, a gas delivery sub-system, a backside sub-system, an impedance matching sub-system, and a bias matching sub-system.

4. The system of claim 1 , wherein the processing chamber comprises a plurality of processing chambers.

5. The system of claim 1 , wherein the recipe includes instructions for a processing sequence including which of one or more gases are to be used for processing the substrate, a source generator to be used for creating a biasing voltage and creating a plasma within the processing chamber, an ignition method for igniting process gas used to create the plasma, at least one of a pressure or temperature used for processing the substrate, and a time interval for the processing sequence.

6. The system of claim 1 , further comprising one or more sensors disposed within the processing chamber, operably connected to the controller, configured to detect the plurality of different parameters associated with processing the substrate, and

provide information relating to the plurality of different parameters to the controller during processing of the substrate.