Organic light emitting diode display
An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.
1. An organic light emitting diode display, comprising:
a substrate;
a first buffer layer on the substrate;
a first semiconductor layer on the first buffer layer, the first semiconductor layer overlapping the first buffer layer in a direction perpendicular to a surface of the substrate;
a first gate insulating layer on the first semiconductor layer;
a first gate electrode and a blocking layer on the first gate insulating layer;
a second buffer layer on the first gate electrode;
a second semiconductor layer on the second buffer layer;
a second gate insulating layer on the second semiconductor layer such that the second semiconductor layer is between the second gate insulating layer and the second buffer layer in a sectional view;
a second gate electrode on the second gate insulating layer; and
an electrode in direct contact with both the first semiconductor layer and a top surface of the second gate insulating layer, wherein
the blocking layer is disposed in a same layer as the first gate electrode and overlaps the second semiconductor layer in a direction perpendicular to the surface of the substrate,
the blocking layer does not overlap the first gate electrode in a direction perpendicular to the surface of the substrate, and
the second buffer layer is disposed between the blocking layer and the second semiconductor layer.
2. The organic light emitting diode display as claimed in claim 1 , further comprising:
a driving voltage line transmitting a driving voltage, wherein the blocking layer is connected to the driving voltage line to receive the driving voltage.
3. The organic light emitting diode display as claimed in claim 2 , wherein the first semiconductor layer includes:
a first channel region overlapping the first gate electrode; and
a first source region and a first drain region at respective sides of the first channel region, and
the second semiconductor layer includes:
a second channel region overlapping the second gate electrode; and
a second source region and a second drain region at respective sides of the second channel region.
4. The organic light emitting diode display as claimed in claim 3 , wherein the blocking layer overlaps the second channel region.
5. The organic light emitting diode display as claimed in claim 4 , further comprising:
a third gate insulating layer on the second gate electrode; and
a second storage electrode on the third gate insulating layer and overlapping a first storage electrode of the second gate electrode.
6. The organic light emitting diode display as claimed in claim 5 , wherein
the electrode in direct contact with both the first semiconductor layer and the top surface of the second gate insulating layer comprises a first source electrode and a first drain electrode respectively connected to the first source region and the first drain region,
the organic light emitting diode display further includes a second source electrode and a second drain electrode respectively connected to the second source region and the second drain region, and
the second storage electrode is connected to the second drain electrode.
7. The organic light emitting diode display as claimed in claim 6 , further comprising:
a pixel electrode on the second storage electrode;
an organic emission layer on the pixel electrode; and
a common electrode on the organic emission layer, wherein the second drain electrode is connected to the pixel electrode.
8. The organic light emitting diode display as claimed in claim 7 , further comprising an encapsulation layer on the common electrode.
9. The organic light emitting diode display as claimed in claim 5 , wherein
the electrode in direct contact with both the first semiconductor layer and the top surface of the second gate insulating layer comprises a first source electrode and a first drain electrode respectively connected to the first source region and the first drain region,
the organic light emitting diode display further includes a second source electrode and a second drain electrode respectively connected to the second source region and the second drain region, and
the second storage electrode is connected to the driving voltage line.
10. The organic light emitting diode display as claimed in claim 9 , wherein one of the first semiconductor layer and the second semiconductor layer is an oxide semiconductor and the other includes polysilicon.
11. The organic light emitting diode display as claimed in claim 1 , wherein the blocking layer is made of a same material as the first gate electrode.
12. The organic light emitting diode display as claimed in claim 1 , wherein the blocking layer is electrically conductive.
13. An organic light emitting diode display, comprising:
a substrate;
a first transistor on the substrate;
a second transistor on the first transistor;
a blocking layer under the second transistor; and
a buffer layer between the blocking layer and the second transistor, wherein
the first transistor includes:
a first semiconductor layer on the substrate; and
a first gate electrode on the first semiconductor layer;
the second transistor includes:
a second semiconductor layer on the buffer layer, the second semiconductor layer including a channel region; and
a second gate electrode disposed on the second semiconductor layer such that the second semiconductor layer is between the second gate electrode and the buffer layer in a sectional view; and
a second source electrode over the second semiconductor layer that electrically connects a source region of the second semiconductor layer to the blocking layer, wherein
the blocking layer is disposed in a same layer as the first gate electrode and overlaps the channel region, and
the blocking layer does not overlap the first gate electrode in a direction perpendicular to a surface of the substrate.
14. The organic light emitting diode display as claimed in claim 13 , wherein the second semiconductor layer further includes:
the source region and a drain region at respective sides of the channel region, wherein
the channel region overlaps the second gate electrode.
15. The organic light emitting diode display as claimed in claim 14 , further comprising a driving voltage line transmitting a driving voltage, wherein the blocking layer is connected to the driving voltage line to receive the driving voltage.
16. The organic light emitting diode display as claimed in claim 15 , wherein the blocking layer overlaps the source region and the drain region of the second semiconductor layer.
17. The organic light emitting diode display as claimed in claim 16 , wherein one of the first semiconductor layer and the second semiconductor layer is an oxide semiconductor and another includes polysilicon.