Substrate structure and method for fabricating semiconductor structure including the substrate structure
View Patent ↗A substrate structure and a method for fabricating a semiconductor structure including the substrate structure are provided. The substrate structure includes a substrate, a bow adjustment layer, and a silicon layer. The bow adjustment layer is on the top surface of the substrate. The silicon layer is on the bow adjustment layer. The substrate structure has a total bow value, and the total vow value is from −20 μm to −40 μm.
1. A substrate structure, comprising:
a ceramic substrate;
a bow adjustment layer in direct contact with a top surface of the ceramic substrate; and
a silicon layer in direct contact with the bow adjustment layer, wherein the substrate structure has a total bow value, and the total bow value is from −20 μm to −40 μm, and wherein the ceramic substrate has a positive bow value when the bow adjustment layer has a negative bow value, and the ceramic substrate has a negative bow value when the bow adjustment layer has a positive bow value.
2. The substrate structure as claimed in claim 1 , further comprising:
a buffer layer on the silicon layer, wherein the buffer layer comprises aluminum nitride, gallium nitride, aluminum gallium nitride, or a combination thereof, and the buffer layer has a thickness that is from 0.2 μm to 0.5 μm.
3. The substrate structure as claimed in claim 1 , wherein the ceramic substrate is an aluminum nitride substrate.
4. The substrate structure as claimed in claim 1 , wherein the ceramic substrate has a bottom surface opposite to the top surface, and the ceramic substrate has a mark on the bottom surface.
5. The substrate structure as claimed in claim 1 , wherein the bow adjustment layer comprises silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, or a combination thereof.
6. The substrate structure as claimed in claim 1 , wherein the substrate structure has a diameter that is from 6 inches to 8 inches.
7. The substrate structure as claimed in claim 1 , wherein the bow adjustment layer has a thickness that is from 0.3 μm to 2.5 μm, and the silicon layer has a thickness that is from 0.1 μm to 0.6 μm.