Systems and methods for superconducting quantum refrigeration
A heat transfer device and method are disclosed. The device includes a working region (i.e., working substance) made from a first superconducting material having a superconducting state and a normal state when magnetized. The first superconducting material has a first energy gap while in the superconducting state. A substrate (i.e., cold reservoir) is connected to the working region at a first tunnel junction. The substrate may be a metallic substrate. A heat sink (i.e., hot reservoir) is connected to the working region at a second tunnel junction. The heat sink is made from a second superconducting material having a second energy gap that is larger than the first energy gap. In a particular example, the heat transfer device includes a metallic substrate is made from Copper, a working region made from Tantalum, a heat sink made from Niobium, and the first and second tunnel junctions are made from Tantalum Oxide.
1. A heat transfer device, comprising:
a working region made from a first superconducting material having a superconducting state and a normal state when magnetized, and wherein the first superconducting material has a first energy gap while in the superconducting state;
a metallic substrate connected to the working region at a first tunnel junction;
a heat sink made from a second superconducting material and connected to the working region at a second tunnel junction, and wherein the second superconducting material has a second energy gap that is larger than the first energy gap.
2. The heat transfer device of claim 1 , further comprising a magnetizer configured to adiabatically magnetize the working region so as to drive the first superconducting material to the normal state.
3. The heat transfer device of claim 2 , wherein the magnetizer comprises a current source configured to selectively apply a supercurrent to the heat sink to induce a magnetic field.
4. The heat transfer device of claim 1 , wherein the first and/or second tunnel junctions comprise an insulator.
5. The heat transfer device of claim 2 , wherein the first and/or second tunnel junctions comprise a disordered oxide.
6. The heat transfer device of claim 1 , wherein the metallic substrate is Copper, Gold, Silver, or Aluminum doped with Manganese.
7. The heat transfer device of claim 1 , wherein the first superconducting material is Tantalum, Aluminum, Tin, Mercury, or Indium.
8. The heat transfer device of claim 1 , wherein the second superconducting material is Niobium, Niobium Nitride, Niobium-Titanium, Niobium Nitride-Titanium, Niobium-Germanium, Magnesium Diboride, or a covalent superconductor.
9. The heat transfer device of claim 1 , where the substrate is suspended to reduce phonon-mediated thermal transport between the substrate and the working region.
10. The heat transfer device of claim 9 , wherein the working region is suspended to reduce phonon-mediated thermal transport between the working region and the heat sink.
11. The heat transfer device of claim 1 , wherein the metallic substrate is Copper, the first superconducting material is Tantalum, and the second superconducting material is Niobium.
12. The heat transfer device of claim 11 , wherein the first and/or second tunnel junctions are Tantalum Oxide (TaO and/or Ta 2 O 5 ).
13. A single-photon detector comprising a heat transfer device according to claim 1 .
14. A sensor comprising a heat transfer device according to claim 1 .