Semiconductor sub-assembly and semiconductor power module
View Patent ↗A semiconductor sub-assembly and a semiconductor power module capable of having the reduced thickness of a chip and reduced thermal resistance are provided. The semiconductor sub-assembly includes a single or a plurality of semiconductor chips having a first electrode that is formed on the lower surface thereof, a second electrode that is formed on the upper surface thereof, and a plurality of chip-side signal electrode pads that are formed at one end of the upper surface thereof. The semiconductor chip is embedded in the embedded structure and a plurality of extension signal electrode pads are connected to each of the chip-side signal electrode pads. The extension signal electrode pad is formed on the embedded substrate in a size greater than the chip-side signal electrode pad when viewed on the plane.
1. A semiconductor sub-assembly, comprising:
a single or a plurality of semiconductor chips having a first electrode formed on the lower surface thereof, having a second electrode formed on the upper surface thereof, and having a plurality of chip-side signal electrode pads formed at one end of the upper surface thereof;
an embedded substrate in which the semiconductor chip is embedded, wherein the embedded substrate completely surrounds the semiconductor chip without overlying or underlying the semiconductor chip; and
a plurality of extension signal electrode pads connected to each of the chip-side signal electrode pads,
wherein the extension signal electrode pad is formed on the embedded substrate in a size greater than the chip-side signal electrode pad when viewed on the plane,
wherein an opening for receiving the semiconductor chip is formed in the embedded substrate,
wherein electrical connection between the chip-side signal electrode pad of the semiconductor chip and the extension signal electrode pad is performed in a two-layer wiring layer of metal plating, and the wiring layers include a first wiring layer and a second wiring layer.
2. The semiconductor sub-assembly of claim 1 ,
wherein the first electrode is electrically and thermally connected to a first electrode pad installed on the entire lower surface of the embedded substrate, and the second electrode is exposed to the upper surface of the semiconductor chip,
wherein the chip-side signal electrode pad is connected to the extension signal electrode pad by a connection wiring installed on the upper surface of the embedded substrate,
wherein the first electrode pad and the extension signal electrode pad are formed by meta 1 plating, and
wherein at least a pair of the adjacent chip-side signal electrode pads among the plurality of chip-side signal electrode pads of the semiconductor chip has a first side connected to a connection wiring included in a first wiring layer formed on the embedded substrate, has a second side connected to a connection wiring included in a second wiring layer formed on the first writing layer with an insulating layer interposed there between, and has the connect ion wiring included in the first wiring layer and the connection wiring included in the second wiring layer formed to have a region vertically overlapped with each other.
3. A semiconductor power module having the semiconductor sub-assembly of claim 2 , comprising:
wherein the first electrode pad of the semiconductor sub-assembly is connected to a first electrode terminal of a first direct copper bond (DCB) substrate installed at the lower side of the first electrode pad,
wherein a first external electrode terminal is connected to the first electrode terminal,
wherein the second electrode of the semiconductor chip is connected to a second electrode terminal of a second DCB substrate installed at the upper side of the second electrode,
wherein a second external electrode terminal is connected to the second electrode terminal,
wherein the plurality of extension signal electrode pads connected to the chip-side signal electrode pad of the semiconductor chip are connected to a plurality of external signal terminals, and
wherein when viewed on the plane, an insulation distance is secured by isolating between the second electrode terminal and the extension signal electrode pad, and between the second electrode terminal and the external signal terminal.
4. The semiconductor power module of claim 3 , wherein the connection of the first electrode pad and the first electrode terminal, the connect ion of the second electrode and the second electrode terminal, and the connection of the extension signal electrode pad and the external signal terminal are performed by soldering.
5. The semiconductor sub-assembly of claim 1 , wherein when the plurality of semiconductor chips are connected in parallel, the first electrode and the second electrode are commonly used.
6. A semiconductor power module having the semiconductor sub-assembly of claim 3 , comprising:
wherein the first electrode pad of the semiconductor sub-assembly is connected to a first electrode terminal of a first direct copper bond (DCB) substrate installed at the lower side of the first electrode pad, and
wherein a first external electrode terminal is connected to the first electrode terminal,
wherein the second electrode of the semiconductor chip is connected to a second electrode terminal of a second DCB substrate installed at the upper side of the second electrode, and
wherein a second external electrode terminal is connected to the second electrode terminal,
wherein the plurality of extension signal electrode pads connected to the chip-side signal elect rode pad of the semiconductor chip are connected to a plurality of external signal terminals, and
wherein when viewed on the plane, an insulation distance is secured by isolating between the second electrode terminal and the extension signal electrode pad, and between the second electrode terminal and the external signal terminal.
7. The semiconductor power module of claim 6 , where in the connection of the first elect rode pad and the first electrode terminal, the connection of the second electrode and the second electrode terminal, and the connect ion of the extension signal electrode pad and the external signal terminal are performed by soldering.
8. A semiconductor power module having the semiconductor sub-assembly of claim 1 , comprising:
wherein the first electrode pad of the semiconductor sub-assembly is connected to a first electrode terminal of a first direct copper bond (DCB) substrate installed at the lower side of the first electrode pad,
wherein a first external electrode terminal is connected to the first electrode terminal,
wherein the second electrode of the semiconductor chip is connected to a second electrode terminal of a second DCB substrate installed at the upper side of the second electrode,
wherein a second external electrode terminal is connected to the second electrode terminal,
wherein the plurality of extension signal electrode pads connected to the chip-side signal electrode pad of the semiconductor chip are connected to a plurality of external signal terminals, and
wherein when viewed on the plane, an insulation distance is secured by isolating between the second electrode terminal and the extension signal electrode pad, and between the second electrode terminal and the external signal terminal.
9. The semiconductor power module of claim 8 , wherein the connection of the first electrode pad and the first electrode terminal, the connection of the second electrode and the second electrode terminal, and the connection of the extension signal electrode pad and the external signal terminal are performed by soldering.
10. The semiconductor sub-assembly of claim 1 , wherein the first electrode is electrically and thermally connected to the first electrode pad by metal plating installed on the entire lower surface of the embedded substrate and the second electrode of the semiconductor chip is exposed on the upper surface of the semiconductor chip, and a second electrode pad of metal plating is formed on the surface thereof.