Methods of forming a device, and related devices, memory devices, and electronic systems
A method of forming a device comprises forming sacrificial pillar structures over conductive structures overlying a barrier structure substantially impermeable to hydrogen. The sacrificial pillar structures are separated from one another by trenches linearly extending in a first lateral direction orthogonal to a second lateral direction in which the conductive structures linearly extend. Gate electrodes are formed within the trenches and laterally adjacent sidewalls of the sacrificial pillar structures. The sacrificial pillar structures are removed to form openings between the gate electrodes. Dielectric liner structures are formed within the openings and laterally adjacent sidewalls of the gate electrodes. Channel structures are formed within the openings after forming the dielectric liner structures. The channel structures comprise a semiconductive material having a band gap larger than that of polycrystalline silicon. Conductive contacts are formed on the channel structures. A device, a memory device, and an electronic system are also described.
1 . A device, comprising:
a first barrier structure comprising one or more of AlO x , AlO x N y , AlSi x N y , and AlSi x O y N z ;
conductive line structures overlying the first barrier structure and laterally extending in a first direction;
channel pillars overlying the conductive line structures and each comprising a semiconductive material having a band gap larger than that of polycrystalline silicon;
dielectric liner structures substantially laterally surrounding sidewalls of the channel pillars;
gate electrodes laterally adjacent outer sidewalls of the dielectric liner structures and laterally extending in a second direction substantially perpendicular to the first direction;
conductive contacts overlying the channel pillars;
a second barrier structure overlying and laterally extending across upper surfaces of the dielectric liner structures and the gate electrodes, the second barrier structure comprising one or more of AlO x , AlO x N y , AlSi x N y , and AlSi x O y N z ;
a dielectric material overlying an upper surface of the second barrier structure; and
capacitors within apertures extending through the dielectric material and the second barrier structure to upper surfaces of the conductive contacts.
2 . The device of claim 1 , further comprising a third barrier structure substantially impermeable to hydrogen overlying portions of the capacitors and the dielectric material.
3 . The device of claim 1 , further comprising conductive structures on the conductive line structures and laterally adjacent the channel pillars.
4 . A device, comprising:
a first barrier structure substantially impermeable to hydrogen;
conductive line structures overlying the first barrier structure and laterally extending in a first direction, the conductive line structures comprising one or more of Ru, Mo, and TiN;
channel pillars overlying the conductive line structures and each comprising one or more of Zn x Sn y O, In x Zn y O, Zn x O, In x Ga y Zn z O, In x Ga y Si z O a , In x W y O, In x O, Sn x O, Ti x O, Zn x ON z , Mg x Zn y O, Zr x In y Zn z O, Hf x In y Zn z O, Sn x In y Zn z O, Al x Sn y In z Zn a O, Si x In y Zn z O, Al x Zn y Sn z O, Ga x Zn y Sn z O, and Zr x Zn y Sn z O;
dielectric liner structures substantially laterally surrounding sidewalls of the channel pillars;
gate electrodes laterally adjacent outer sidewalls of the dielectric liner structures and laterally extending in a second direction substantially perpendicular to the first direction;
conductive contacts overlying the channel pillars; and
a second barrier structure substantially impermeable to hydrogen overlying and laterally extending across upper surfaces of the dielectric liner structures and the gate electrodes,
the second barrier structure in direct physical contact with the dielectric liner structures, and
the first barrier structure and the second barrier structure each individually comprising one or more of AlO x , AlO x N y , AlSi x N y , and AlSi x O y N z .
5 . A memory device, comprising:
word lines;
digit lines;
a barrier structure underlying the digit lines and comprising one or more of AlO x , AlO x N y , AlSi x N y , and AlSi x O y N z ; lines;
memory cells overlying the barrier structure and electrically coupled to the word lines and the digit lines, each memory cell comprising:
a vertical transistor electrically coupled to at least one of the word lines, the vertical transistor comprising:
a channel pillar over one of the digit lines and laterally neighboring the at least one of the word lines, the channel pillar comprising at least one semiconductor material having a larger bandgap than polycrystalline silicon; and
a dielectric liner structure between the channel pillar and the at least one of the word lines; and
a capacitor electrically coupled to the vertical transistor;
an additional barrier structure overlying the at least one of the word lines and the dielectric liner structure of each of the memory cells and comprising one or more of AlO x , AlO x N y , AlSi x N y , and AlSi x O y N z , a lower portion of the capacitor of each of the memory cells vertically extending entirely through the additional barrier structure; and
another barrier structure overlying the memory cells and comprising one or more of AlO x , AlO x N y , AlSi x N y , and AlSi x O y N z .
6 . The memory device of claim 5 , wherein the channel pillar of each of the memory cells comprises an oxide semiconductor material.
7 . An electronic system, comprising:
an input device;
an output device;
a processor device operably coupled to the input device and the output device; and
a device operably coupled to the processor device and comprising:
a first barrier structure comprising one or more of AlO x , AlO x N y , AlSi x N y , and AlSi x O y N z ;
a vertical transistor overlying the first barrier structure and comprising:
a channel structure comprising at least one semiconductor material having a larger bandgap than polycrystalline silicon;
a gate dielectric material laterally surrounding the channel structure; and
a gate electrode laterally adjacent the gate dielectric material; and
a second barrier structure overlying the gate dielectric material and the gate electrode of the vertical transistor, the second barrier structure comprising one or more of AlO x , AlO x N y , AlSi x N y , and AlSi x O y N z .