Semiconductor device
View Patent ↗A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, and an electrode. The first transistor and the second transistor include an oxide, a gate insulator over the oxide, and a gate. The electrode is connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor. The channel length of the first transistor is longer than the short side of the first conductor. The channel length of the second transistor is longer than the short side of the second conductor.
1. A semiconductor device comprising:
a first insulator;
a second insulator and a third insulator over the first insulator;
a fourth insulator positioned between the second insulator and the third insulator;
an oxide covering the first to fourth insulators;
a fifth insulator over the oxide;
a first conductor that is positioned between the second insulator and the fourth insulator and is in contact with the fifth insulator;
a second conductor that is positioned between the third insulator and the fourth insulator and is in contact with the fifth insulator; and
a third conductor overlapping with the fourth insulator,
wherein the oxide, the fifth insulator, and the first conductor constitute a first transistor,
wherein the oxide, the fifth insulator, and the second conductor constitute a second transistor,
wherein the third conductor is positioned between the first transistor and the second transistor and is connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor,
wherein a channel length of the first transistor is longer than a short side of the first conductor, and
wherein a channel length of the second transistor is longer than a short side of the second conductor.
2. The semiconductor device according to claim 1 ,
wherein the oxide includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.
3. The semiconductor device according to claim 1 , further comprising:
a fourth conductor over the third conductor;
a fifth conductor over the first transistor;
a sixth conductor over the second transistor;
a first capacitor over the fifth conductor; and
a second capacitor over the sixth conductor,
wherein the fourth conductor is connected to the third conductor,
wherein the fifth conductor is connected to the other of the source and the drain of the first transistor and one electrode of the first capacitor, and
wherein the sixth conductor is connected to the other of the source and the drain of the second transistor and one electrode of the second capacitor.
4. The semiconductor device according to claim 3 , further comprising:
a sixth insulator over the first transistor and the second transistor; and
a seventh insulator over the sixth insulator,
wherein the sixth insulator includes a first opening that exposes the oxide,
wherein the sixth insulator and the seventh insulator include a second opening and a third opening that expose the oxide,
wherein the third conductor is provided in the first opening,
wherein the fifth conductor is provided in the second opening,
wherein the sixth conductor is provided in the third opening, and
wherein the fourth conductor functioning as a wiring is positioned over the sixth insulator and the third conductor.
5. The semiconductor device according to claim 4 ,
wherein a long side of the fourth conductor is substantially perpendicular to a long side of the first conductor and a long side of the second conductor, and
wherein an angle between a long side of the oxide and the long side of the fourth conductor is greater than or equal to 20° and less than or equal to 70°.