Nitride semiconductor substrate
A nitride semiconductor substrate can effectively reduce leakage current in the vertical direction. The nitride semiconductor substrate comprises a buffer layer and an operation layer, both of which are made of nitride semiconductor, deposited on a silicon single crystal substrate, wherein the buffer layer comprises a single-layered first initial layer in contact with the silicon single crystal layer, and a single-layered second initial layer in contact with the first initial layer, the first initial layer is made of AlN, the second initial layer is made of Al z Ga 1-z N (0.12≤z≤0.65), and in an X-Y graph where the X-axis denotes z×100 and the Y-axis denotes carbon concentration in the second initial layer, X ranges from 12 to 65 and Y is within a range between Y=1E+17×exp(−0.05×X) and Y=1E+21×exp(−0.05×X).
1. A nitride semiconductor substrate comprising a buffer layer and an operation layer, both of which are made of nitride semiconductor, sequentially deposited on a silicon single crystal substrate, wherein
the buffer layer comprises a single-layered first initial layer formed in contact with the silicon single crystal layer, a single-layered second initial layer formed in contact with the first initial layer, and a layer formed in contact with the second initial layer,
the first initial layer is made of A1N,
the second initial layer is made of Al z Ga 1-z N (0.12≤z≤0.65), and in an X-Y graph where the X-axis denotes z×100 and the Y-axis denotes carbon concentration in the second initial layer, X ranges from 12 to 65 and Y is within a range between Y=1E+17×exp(−0.05×X) and Y=1E+21×exp(−0.05×X),
the layer formed in contact with the second initial layer is made of Al c1 Ga 1−c1 N, and in an X-Y graph where the X-axis denotes clx100 and the Y-axis denotes carbon concentration in the layer formed in contact with the second initial layer, X ranges from 0 to 20 and Y is a range between Y=8E+18×exp (−0.03×X) and Y=4E+20×exp (−0.03×X), and
the carbon concentration of the layer formed in contact with the second initial layer is lower than the carbon concentration of the second initial layer.