IP Library › Granted Patent US 10,861,890
Granted Patent B2
US 10,861,890 · App. 16/598,284 · Granted Dec 8, 2020

Imaging pixels with plasmonic color filter elements

Inventor: Byounghee Lee (Meridian, ID)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/14621H01L27/14627H01L31/02162H04N5/335G01J1/0488G01J3/2803G01J2003/2806G06F3/0304G06K9/2009H01L27/146H01L27/14603H01L27/14625H01L27/14665H04N5/374
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,861,890
App. No.
16/598,284
Granted
Dec 8, 2020
Kind
B2
Abstract

Image sensors may include plasmonic color filter elements that transmit specific wavelengths of incident light. Each plasmonic color filter element may be interposed between a respective microlens and photosensitive area. The plasmonic color filter elements may be formed from a metal layer such as gold, silver, platinum, aluminum, or copper and may have a pattern of openings in the metal layer that is designed to allow transmission of a certain type of light. To prevent cross-talk between adjacent pixels having plasmonic color filter elements, metal walls may be interposed between adjacent plasmonic color filter elements. The metal walls may extend above the upper surface of the metal layer that forms the plasmonic color filter elements. The metal walls may run around the periphery of each plasmonic color filter element.

Claims (29)

1. An image sensor comprising an array of imaging pixels, wherein at least one of the imaging pixels comprises:

a photosensitive region; and

a plasmonic color filter element formed over the photosensitive region, wherein the plasmonic color filter element has at least one metal layer with openings and metal walls that surround the at least one metal layer.

2. The image sensor defined in claim 1 , wherein the at least one metal layer comprises a material selected from the group consisting of: gold, silver, platinum, aluminum, and copper.

3. The image sensor defined in claim 1 , wherein each opening has a width between 10 nanometers and 300 nanometers.

4. The image sensor defined in claim 1 , wherein the at least one metal layer has an upper surface and a lower surface and wherein the metal walls are formed over the upper surface of the at least one metal layer.

5. The image sensor defined in claim 4 , wherein each opening of the plurality of openings extends from the upper surface of the at least one metal layer to the lower surface of the at least one metal layer.

6. The image sensor defined in claim 5 , wherein the metal walls extend upwards from the upper surface of the at least one metal layer.

7. The image sensor defined in claim 5 , further comprising:

a material formed between the metal walls over the upper surface of the one or more metal layer.

8. The image sensor defined in claim 7 , wherein the material comprises air.

9. The image sensor defined in claim 1 , further comprising:

a dielectric layer interposed between the plasmonic color filter element and the photosensitive region.

10. The image sensor defined in claim 1 , wherein the metal walls comprise a material selected from the group consisting of: gold, silver, platinum, aluminum, and copper.

11. The image sensor defined in claim 1 , wherein the openings comprise elongated slits in the at least one metal layer.

12. The image sensor defined in claim 1 , wherein the openings are filled with air.

13. The image sensor defined in claim 1 , wherein the at least one metal layer has a first thickness and the metal walls have a second thickness that is greater than the first thickness.

14. An image sensor comprising an array of imaging pixels, wherein at least one of the imaging pixels comprises:

a photosensitive region; and

a metal layer formed over the photosensitive with an upper surface, a lower surface, and a periphery, wherein a plurality of openings are formed in the metal layer; and

metal walls that extend above the upper surface of the metal layer and that extend around the periphery of the metal layer.

15. The image sensor defined in claim 14 , wherein the metal layer comprises a material selected from the group consisting of: gold, silver, platinum, aluminum, and copper and wherein the metal walls comprise a material selected from the group consisting of: gold, silver, platinum, aluminum, and copper.

16. The image sensor defined in claim 14 , wherein each opening of the plurality of openings extends from the upper surface of the metal layer to the lower surface of the metal layer.

17. The image sensor defined in claim 14 , wherein each opening of the plurality of openings has a width between 10 nanometers and 300 nanometers.

18. An image sensor comprising an array of imaging pixels, wherein at least one of the imaging pixels comprises:

a photosensitive region; and

a plasmonic color filter element formed over the photosensitive region, wherein the plasmonic color filter element has a metal layer with a periphery and metal walls that extend around the periphery of the metal layer.

19. The image sensor defined in claim 18 , wherein the metal layer has openings and wherein each opening has a width between 10 nanometers and 300 nanometers.

20. The image sensor defined in claim 18 , wherein the at least one metal layer has an upper surface and a lower surface and wherein the metal walls are formed over the upper surface of the at least one metal layer.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 054090, FRAME 0617 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064081/0167 →
SECURITY INTEREST Recorded Oct 16, 2020
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION; ON SEMICONDUCTOR CONNECTIVITY SOLUTIONS, INC.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 054090/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 10, 2019
From: LEE, BYOUNGHEE
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 050678/0853 →
Continuity (2)
Division 15979190 · May 14, 2018
Related Publication 20200043966A1 · Feb 6, 2020