Systems and methods to detect and measure the current mismatch among parallel semiconductor devices
View Patent ↗Apparatuses and methods of the present disclosure integrate a non-intrusive current sensor in the form of a current mismatch sensor into a power module having paralleled semiconductor structures or components. The current mismatch can be detected by the current sensor by monitoring a magnetic flux density between the paralleled components or devices.
1. An apparatus, comprising:
a substrate having a first side and a second side;
a first conductive trace on the first side;
a second conductive trace, different from the first conductive trace, on the first side; a pair of a same semiconductor die having respective bodies adjacent and proximal to the first side, and distal from the second side, the respective bodies defined by respective edges, each of the pair having at least a respective first terminal coupled to the first conductive trace and a respective second terminal coupled to the second conductive trace, the respective bodies of the pair and the respective first terminals and the respective second terminals physically oriented parallel to and spaced apart from one another, opposing ones of the respective edges defining a space between the pair, the pair configured to receive a current carried by the first conductive trace and split between the respective first terminal of each of the pair; and
a magnetic field sensor located in the space between the pair, adjacent and proximal to the first side, distal from the second side, without physically overlapping any portion of the pair, the first conductive trace, and the second conductive trace, the magnetic field sensor configured to sense a magnetic flux density within the space between the pair,
wherein the magnetic field sensor is magneto-resistive.
2. The apparatus of claim 1 , wherein the magnetic flux density is representative of a difference between respective magnetic fields around each of the pair of the same semiconductor die, the difference between the respective magnetic fields being determinative of a current mismatch between the current split between the respective first terminal of each of the pair.
3. The apparatus of claim 1 , wherein the magnetic field sensor is anisotropic.
4. The apparatus of claim 1 , wherein the magnetic field sensor is a Hall-effect sensor.
5. The apparatus of claim 1 , wherein the substrate is ceramic.
6. The apparatus of claim 1 , wherein the same semiconductor die are GaN transistors.
7. The apparatus of claim 1 , wherein the same semiconductor die are Si or SiC transistors.
8. The apparatus of claim 1 , wherein the substrate and the pair of the same semiconductor die are parallel to an X-Y plane, and the magnetic field sensor is configured to sense a z-component of the magnetic flux density within the space between the pair, the z-component being perpendicular to the X-Y plane.
9. The apparatus of claim 1 , wherein the magnetic field sensor is electrically isolated from the current carried by the first conductive trace and split between the respective first terminal of each of the pair.
10. The apparatus of claim 1 , wherein the magnetic field sensor and each of the pair of the same semiconductor die is coupled to the first side of the substrate, the magnetic field sensor is located at a point equidistant from each of the pair of the same semiconductor die on the first side of the substrate and within the space between the pair, and is configured to sense respective magnetic fields of the respective pair in a z-axis, perpendicular to the first side of the substrate and within the space between the pair.
11. A method comprising:
obtaining a substrate having a first side and a second side, a first conductive trace on the first side, and a second conductive trace, different from the first conductive trace, on the first side;
coupling to the substrate a pair of a same semiconductor die having respective bodies adjacent and proximal to the first side, and distal from the second side, the respective bodies defined by respective edges, each of the pair having at least a respective first terminal coupled to the first conductive trace and a respective second terminal coupled to the second conductive trace, the respective bodies of the pair and the respective first terminals and the respective second terminals physically oriented parallel to and spaced apart from one another, opposing ones of the respective edges defining a space between the pair, the pair configured to receive a current carried by the first conductive trace and split between the respective first terminal of each of the pair; and
coupling a magnetic field sensor to the substrate, the magnetic field sensor located in the space between the pair, adjacent and proximal to the first side, distal from the second side, without physically overlapping any portion of the pair, the first conductive trace, and the second conductive trace, the magnetic field sensor configured to sense a magnetic flux density within the space between the pair,
wherein the magnetic field sensor is magneto-resistive.
12. The method of claim 11 , wherein each of the pair of the same semiconductor die is configured as a respective switch, the method further comprising:
applying a voltage between the first conductive trace and the second conductive trace;
biasing each respective switch to an on state such that the current caned by the first conductive trace is split between the respective first terminal of each of the pair;
measuring, using the magnetic field sensor, the magnetic flux density in the space between the pair wherein the magnetic flux density is representative of a difference between respective magnetic fields around each of the pair of the same semiconductor die, the difference between the respective magnetic fields being determinative of a current mismatch between the current split between the respective first terminal of each of the pair.
13. The method of claim 11 , wherein the magnetic field sensor is anisotropic.
14. The method of claim 11 , wherein the magnetic field sensor is a Hall-effect sensor.
15. The method of claim 11 , wherein the substrate and the pair of the same semiconductor die are parallel to an X-Y plane, and the magnetic field sensor is configured to sense a z-component of the magnetic flux density within the space between the pair, the z-component being perpendicular to the X-Y plane.
16. The method of claim 11 , wherein the substrate is ceramic, the pair of the same semiconductor die are GaN transistors, and the magnetic field sensor is anisotropic magneto-resistive.
17. The method of claim 11 , wherein the magnetic field sensor is electrically isolated from the current carried by the first conductive trace and split between the respective first terminal of each of the pair.
18. The method of claim 11 , wherein the magnetic field sensor and each of the pair of the same semiconductor die is coupled to the first side of the substrate, the magnetic field sensor is located at a point equidistant from each of the pair of the same semiconductor die on the first side of the substrate and within the space between the pair, and is configured to sense respective magnetic fields of the respective pair in a z-axis, perpendicular to the first side of the substrate and within the space between the pair.