Methods for depositing phosphorus-doped silicon nitride films
Methods for depositing hardmask materials and films, and more specifically, for depositing phosphorus-doped, silicon nitride films are provided. A method of depositing a material on a substrate in a processing chamber includes exposing a substrate to a deposition gas in the presence of RF power to deposit a phosphorus-doped, silicon nitride film on the substrate during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The deposition gas contains one or more silicon precursors, one or more nitrogen precursors, one or more phosphorus precursors, and one or more carrier gases. The phosphorus-doped, silicon nitride film has a phosphorus concentration in a range from about 0.1 atomic percent (at %) to about 10 at %.
1 . A method of depositing a material on a substrate in a processing chamber, comprising:
exposing a substrate to a deposition gas in the presence of RF power to deposit a phosphorus-doped, silicon nitride film on the substrate during a plasma-enhanced chemical vapor deposition process, wherein:
the deposition gas comprises a silicon precursor, a nitrogen precursor, a phosphorus precursor, and a carrier gas; and
the phosphorus-doped, silicon nitride film has a phosphorus concentration in a range from about 0.1 atomic percent (at %) to about 10 at %.
2 . The method of claim 1 , further comprising turning off the RF power while continuing to expose the substrate to the deposition gas.
3 . The method of claim 1 , wherein the plasma-enhanced chemical vapor deposition process is a pulsed plasma process which comprises pulsing the RF power on and off while continuing to expose the substrate to the deposition gas.
4 . The method of claim 1 , wherein the plasma-enhanced chemical vapor deposition process is a continuous plasma process which comprises maintaining the RF power on while continuing to expose the substrate to the deposition gas.
5 . The method of claim 1 , further comprising densifying the phosphorus-doped, silicon nitride film by exposing the substrate to hydrogen while continuing to expose the substrate to the deposition gas.
6 . The method of claim 1 , further comprising densifying the phosphorus-doped, silicon nitride film by sequentially alternating between cycles of the plasma-enhanced chemical vapor deposition process and a nitrogen-plasma process, wherein the nitrogen-plasma process comprises exposing the substrate to a nitrogen plasma while ceasing to expose the substrate to the deposition gas.
7 . The method of claim 1 , wherein the phosphorus concentration is in a range from about 0.5 at % to about 8 at %.
8 . The method of claim 1 , wherein the phosphorus concentration is in a range from about 1 at % to about 6 at %.
9 . The method of claim 1 , wherein the phosphorus-doped, silicon nitride film has a nitrogen concentration in a range from about 40 at % to about 70 at %.
10 . The method of claim 1 , wherein the phosphorus-doped, silicon nitride film has a silicon concentration in a range from about 25 at % to about 55 at %.
11 . The method of claim 1 , wherein the phosphorus precursor comprises phosphine, methylphosphine, ethylphosphine, propylphosphine, butylphosphine, phosphorus oxychloride, trimethylphosphate, triethylphosphate, isomers thereof, or any combination thereof.
12 . The method of claim 1 , wherein the nitrogen precursor comprises ammonia, hydrazine, dimethyl hydrazine, tert-butylhydrazine, phenylhydrazine, 2,2′-azoisobutane, ethylazide, isomers thereof, or any combinations thereof.
13 . The method of claim 1 , wherein the silicon precursor comprises silane, disilane, trisilane, tetrasilane, pentasilane, methylsilane, chlorosilane, dichlorosilane, trichlorosilane, silicon tetrachloride, hexachlorodisilane, or any combinations thereof.
14 . The method of claim 1 , wherein the carrier gas comprises nitrogen (N 2 ), argon, helium, plasma thereof, or any combination thereof.
15 . The method of claim 1 , wherein the phosphorus-doped, silicon nitride film is a hardmask layer or a stop etch layer.
16 . A method of depositing a material on a substrate in a processing chamber, comprising:
exposing a substrate to a deposition gas while depositing a phosphorus-doped, silicon nitride film on the substrate during a plasma-enhanced chemical vapor deposition process, wherein:
the deposition gas comprises a silicon precursor, a nitrogen precursor, a phosphorus precursor, and a carrier gas; and
the phosphorus-doped, silicon nitride film has a phosphorus concentration in a range from about 0.5 atomic percent (at %) to about 8 at %.
17 . The method of claim 16 , wherein the deposition gas comprises phosphine, silane, and ammonia, and wherein the phosphorus concentration is in a range from about 1 at % to about 6 at %.
18 . A method of depositing a material on a substrate in a processing chamber, comprising:
exposing a substrate to a deposition gas to deposit a phosphorus-doped, silicon nitride film on the substrate during a plasma-enhanced chemical vapor deposition process, wherein:
the deposition gas comprises a silicon precursor, a nitrogen precursor, a phosphorus precursor, and a carrier gas; and
the phosphorus-doped, silicon nitride film has a phosphorus concentration in a range from about 0.1 atomic percent (at %) to about 10 at %;
ceasing the plasma-enhanced chemical vapor deposition process; then
exposing the substrate to a nitrogen plasma to densify the phosphorus-doped, silicon nitride film during a nitrogen-plasma process;
ceasing the nitrogen-plasma process; and
sequentially repeating cycles of the plasma-enhanced chemical vapor deposition process and the nitrogen-plasma process.
19 . The method of claim 18 , wherein the plasma-enhanced chemical vapor deposition process is a pulsed plasma process which comprises pulsing an RF power on and off while continuing to expose the substrate to the deposition gas.
20 . The method of claim 18 , wherein the plasma-enhanced chemical vapor deposition process is a continuous plasma process which comprises maintaining an RF power on while continuing to expose the substrate to the deposition gas.