Current generation from radiation with diamond diode-based devices for detection or power generation
Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.
1. A diode-based detector device comprising:
a p-type diamond layer;
a n-type diamond layer; and
an intrinsic diamond layer arranged between the p-type diamond layer and the n-type diamond layer; and
a circuit configured to transmit a current pulse in a forward bias direction of the diode-based detector device to reset a detection state of the diode-based detector device, wherein during detector operation, the diode-based detector device is configured to be operated in a non-forward-biased state;
wherein the diode-based detector device further comprises at least one of the following features (i) or (ii):
(i) a boron-containing layer is arranged proximate to at least one of the n-type diamond layer or the intrinsic diamond layer, wherein the boron-containing layer comprises one or more of boron nitride, boron carbide, boron oxide, boron, another boron compound, or a conducting metal boride; or
(ii) the intrinsic diamond layer comprises a thickness in a range of from 10 nm to 300 microns.
2. The diode-based detector device of claim 1 , comprising feature (i).
3. The diode-based detector device of claim 2 , further comprising a first metal-containing contact adjacent to the n-type diamond layer, and a second metal-containing contact adjacent to the p-type diamond layer, wherein the first metal-containing contact is arranged between the n-type diamond layer and the boron-containing layer.
4. The diode-based detector device of claim 2 , wherein the boron-containing layer comprises a conducting boron-containing layer, and the n-type diamond layer is arranged between the conducting boron-containing layer and the intrinsic diamond layer.
5. The diode-based detector device of claim 4 , wherein the conducting boron-containing layer serves as a first contact, and the diode-based detector device further comprises a metal-containing contact adjacent to the p-type diamond layer.
6. The diode-based detector device of claim 2 , wherein:
the intrinsic diamond layer includes a first intrinsic diamond sublayer and a second intrinsic diamond sublayer; and
the boron-containing layer is arranged between the first intrinsic diamond sublayer and the second intrinsic diamond sublayer.
7. The diode-based detector device of claim 6 , wherein:
each of the p-type diamond layer, the n-type diamond layer, the first intrinsic diamond sublayer, and the second intrinsic diamond sublayer comprises single crystal material; and
the boron-containing layer comprises one or more of boron nitride, boron carbide, boron oxide, boron, or another boron compound.
8. The diode-based detector device of claim 1 , comprising feature (ii).
9. The diode-based detector device of claim 3 , wherein the intrinsic diamond layer comprises a thickness in a range of from 10 nanometers to 5 microns.
10. The diode-based detector device of claim 8 , wherein the intrinsic diamond layer comprises a thickness in a range of from 6 microns to 300 microns.
11. The diode-based detector device of claim 1 , comprising features (i) and (ii).
12. The diode-based detector device of claim 1 , further comprising a first metal-containing contact adjacent to the n-type diamond layer, and a second metal-containing contact adjacent to the p-type diamond layer.
13. The diode-based detector device of claim 12 , wherein the first metal-containing contact comprises an ohmic contact or a Schottky contact, and the second metal-containing contact comprises an ohmic contact.
14. The diode-based detector device of claim 1 , wherein boron atoms present in the boron-containing layer comprise at least 21% 10 B.
15. The diode-based detector device of claim 1 , wherein each of the p-type diamond layer, the n-type diamond layer, and the intrinsic diamond layer comprises single crystal or polycrystalline material.
16. The diode-based detector device of claim 1 , wherein the p-type diamond layer is doped with boron, and the n-type diamond layer is doped with phosphorus or nitrogen.
17. The diode-based detector device of claim 1 , being configured to operate at an applied voltage of greater than or equal to 0 V.
18. The diode-based detector device of claim 1 , being configured for detection of one or more of neutrons, protons, alpha particles, or beta particles, or being configured for detection of one or more of X-rays, ultraviolet rays, gamma rays, or photons.
19. A diode-based detector device comprising:
a p-type diamond layer comprising single crystal diamond material doped with boron at a first concentration;
a n-type diamond layer;
an intrinsic diamond layer arranged between the p-type diamond layer and the n-type diamond layer, wherein the intrinsic diamond layer includes a first intrinsic diamond sublayer and a second intrinsic diamond sublayer; and
a boron-containing layer arranged proximate to at least one of the n-type diamond layer or the intrinsic diamond layer, wherein the boron-containing layer comprises one or more of boron nitride, boron carbide, boron oxide, boron, another boron compound, or a conducting metal boride;
wherein the boron-containing layer is arranged between the first intrinsic diamond sublayer and the second intrinsic diamond sublayer; and
wherein the boron-containing layer comprises a p-type single crystal diamond material doped with boron at a second concentration, wherein the second concentration is less than the first concentration.
20. A diode-based detector device comprising:
a p-type diamond layer;
a n-type diamond layer; and
an intrinsic diamond layer arranged between the p-type diamond layer and the n-type diamond layer; and
a boron-containing layer is arranged proximate to at least one of the n-type diamond layer or the intrinsic diamond layer, wherein the boron-containing layer comprises one or more of boron nitride, boron carbide, boron oxide, boron, another boron compound, or a conducting metal boride; and
a first metal-containing contact adjacent to the n-type diamond layer, and a second metal-containing contact adjacent to the p-type diamond layer, wherein the first metal-containing contact is arranged between the n-type diamond layer and the boron-containing layer.
21. A diode-based detector device comprising:
a p-type diamond layer;
a n-type diamond layer; and
an intrinsic diamond layer arranged between the p-type diamond layer and the n-type diamond layer; and
a boron-containing layer is arranged proximate to at least one of the n-type diamond layer or the intrinsic diamond layer, wherein the boron-containing layer comprises one or more of boron nitride, boron carbide, boron oxide, boron, another boron compound, or a conducting metal boride; and
wherein the boron-containing layer comprises a conducting boron-containing layer, and the n-type diamond layer is arranged between the conducting boron-containing layer and the intrinsic diamond layer.
22. The diode-based detector device of claim 21 , wherein the conducting boron-containing layer serves as a first contact, and the diode-based detector device further comprises a metal-containing contact adjacent to the p-type diamond layer.