Patterning method of quantum dot layer, quantum dot device and manufacturing method thereof

1. A patterning method of a quantum dot layer, comprising:

forming a quantum dot layer, wherein the quantum dot layer comprises quantum dots and a photoinitiator;

irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer,

before the preset portion of the quantum dot layer is irradiated by the light having the preset wavelength, the patterning method further comprising: adjusting a focal plane and a focal depth of the preset portion of the quantum dot layer while the light having the preset wavelength irradiates the preset portion of the quantum dot layer, and wherein the focal plane is located on an upper surface of the preset portion of the quantum dot layer in a thickness direction of the preset portion of the quantum dot layer, and the focal depth is twice of a thickness of the preset portion of the quantum dot layer, and retaining the photoinitiator in a portion other than the preset portion of the quantum dot layer.

2. The patterning method of the quantum dot layer according to claim 1 , further comprising: removing the photoinitiator in remaining portions of the quantum dot layer other than the preset portion after the preset portion of the quantum dot layer is irradiated by the light having the preset wavelength.

3. The patterning method of the quantum dot layer according to claim 2 , further comprising:

performing a pre-baking treatment on the quantum dot layer before the preset portion of the quantum dot layer is irradiated by the light having the preset wavelength;

performing a post-baking treatment on the quantum dot layer after the preset portion of the quantum dot layer is irradiated by the light having the preset wavelength.

4. The patterning method of the quantum dot layer according to claim 3 , wherein the photoinitiator in the remaining portions of the quantum dot layer other than the preset portion is removed by the post-baking treatment.

5. The patterning method of the quantum dot layer according to claim 4 , wherein a boiling point of the photoinitiator is higher than a temperature of the pre-baking treatment and lower than a temperature of the post-baking treatment.

6. The patterning method of the quantum dot layer according to claim 1 , wherein the irradiating the preset portion of the quantum dot layer by the light having the preset wavelength comprises: shielding the quantum dot layer by a mask plate, and the mask plate comprises a light-transmitting region and a light-shielding region, the light-transmitting region corresponds to the preset portion of the quantum dot layer, and the light-shielding region corresponds to the remaining portions of the quantum dot layer other than the preset portion.

7. The patterning method of the quantum dot layer according claim 1 , wherein the light having the preset wavelength is ultraviolet light, and the photoinitiator is an ultraviolet photoinitiator.

8. The patterning method of the quantum dot layer according to claim 7 , wherein a molecular formula of the photoinitiator is R1(CO)R2, where R1 comprises at least one selected from the group consisting of phenyl group, substituted phenyl group, aromatic group, and substituted aromatic group, and R2 comprises at least one selected from the group consisting of alkyl group and substituted alkyl group.

9. The patterning method of the quantum dot layer according to claim 8 , wherein the photoinitiator comprises at least one selected from the group consisting of 2,2-diethoxyacetophenone, 1-hydroxycyclohexyl phenylketone, 2-hydroxy-2-methyl-1-phenyl-1-acetone, 2-methyl-1-(4-methylthiophenyl)-2-morpholine-1-acetone, 2-dimethylamino-2-benzyl-1-[4-(4-morpholinyl) phenyl]-1-butanone, and 2-hydroxy-2-methyl-1-[4-(2-hydroxyethyl)phenyl]-1-acetone.

10. A manufacturing method of a quantum dot device, comprising: forming a plurality of patterned quantum dot layers by the patterning method according to claim 1 , wherein:

the plurality of the patterned quantum dot layers are arranged in a stacked manner, and

each of the plurality of patterned quantum dot layers comprises an inactive portion and an active portion, the inactive portion corresponds to the preset portion, and the active portion corresponds to remaining portions of the quantum dot layer other than the preset portion.

11. The manufacturing method of the quantum dot device according to claim 10 , wherein:

colors of light emitted by the active portions of the plurality of the patterned quantum dot layers are different from each other; and

the active portions of the plurality of the patterned quantum dot layers are not overlapped with each other in a stacking direction of the plurality of the patterned quantum dot layers.

12. The manufacturing method of the quantum dot device according to claim 10 , further comprising:

forming a plurality of first electrodes spaced apart from each other before the plurality of the patterned quantum dot layers are formed,

wherein the active portions of the plurality of the patterned quantum dot layers overlap with the plurality of the first electrodes respectively in a stacking direction of the plurality of the patterned quantum dot layers.

13. The manufacturing method of the quantum dot device according to claim 10 , further comprising:

forming a second electrode to cover the plurality of the patterned quantum dot layers after the plurality of the patterned quantum dot layers are formed.

14. The manufacturing method of the quantum dot device according to claim 10 , wherein:

the light having the preset wavelength is ultraviolet light, and the photoinitiator is an ultraviolet photoinitiator, and

the manufacturing method further comprises: forming an ultraviolet light isolation layer on at least a side of the plurality of the patterned quantum dot layers.