MATERIALS COMPRISING MATRIX MATERIAL DOPED WITH METAL AND METHODS FOR FABRICATION

1 . A material comprising a first layer of matrix material doped with a dopant metal, wherein the matrix material comprises a rare-earth metal, oxygen, and one or both of sulfur and selenium, and wherein, in the first layer of matrix material doped with the dopant metal, the rare-earth metal has an oxidation state of +3 and the dopant metal has an oxidation state of +2.

2 . The material of claim 1 , wherein the material is a phosphor material.

3 . The material of claim 1 , wherein the first layer of matrix material doped with the dopant metal emits electromagnetic radiation with a wavelength of 400-500 nm or 450-485 nm when excited.

4 . The material of claim 1 , wherein the material further comprises a second layer of matrix material doped with a dopant metal, wherein the matrix material comprises a rare-earth metal, oxygen, and one or both of sulfur and selenium, and wherein, in the second layer of matrix material doped with the dopant metal, the rare-earth metal has an oxidation state of +3 and the dopant metal has an oxidation state of +3.

5 . The material of claim 1 , wherein the rare-earth metal is yttrium, scandium, lanthanum, gadolinium, or lutetium.

6 . The material of claim 1 , wherein the dopant metal is europium.

7 . A method for fabricating a material on a surface of a substrate, wherein the method comprises forming a first layer of matrix material doped with a dopant metal, wherein the matrix material comprises a rare-earth metal, oxygen, and one or both of sulfur and selenium, and

wherein the first layer of matrix material doped with the dopant metal is formed in a reaction space through alternately repeated surface reactions of precursors by

a) depositing a first deposit of matrix material by exposing a deposition surface to a precursor for rare-earth metal, a precursor for oxygen, and one or both of a precursor for sulfur and a precursor for selenium in any order, and

b) doping the surface of the first deposit of matrix material with the dopant metal by exposing the deposition surface to a precursor for dopant metal,

wherein exposing the deposition surface to the precursor for dopant metal is preceded with exposing the deposition surface to either a precursor for sulfur or a precursor for selenium configured to provide the dopant metal, in the first layer of matrix material doped with the dopant metal, with an oxidation state of +2, while the rare-earth metal has an oxidation state of +3.

8 . The method of claim 7 , wherein exposing the deposition surface to the precursor for dopant metal in b) is followed by exposing the deposition surface to either a precursor for sulfur or a precursor for selenium.

9 . The method of claim 7 , wherein the precursor for rare-earth metal is selected from a group consisting of a precursor for yttrium, precursor for scandium, precursor for lanthanum, precursor for gadolinium, and precursor for lutetium.

10 . The method of claim 7 , wherein the precursor for dopant metal is a precursor for europium.

11 . The method of claim 7 , wherein the method further comprises forming a second layer of matrix material doped with a dopant metal, wherein the matrix material comprises a rare-earth metal, oxygen, and one or both of sulfur and selenium, and

wherein the second layer of matrix material doped with the dopant metal is formed in a reaction space through alternately repeated surface reactions of precursors by

c) depositing a second deposit of matrix material by exposing a deposition surface to a precursor for rare-earth metal, a precursor for oxygen, and one or both of a precursor for sulfur and a precursor for selenium in any order, and

d) doping the surface of the second deposit of matrix material with a dopant metal by exposing the deposition surface to a precursor for dopant metal,

wherein exposing the deposition surface to the precursor for dopant metal in d) is followed by exposing the deposition surface to a precursor for oxygen, such that, in the second layer of matrix material doped with the dopant metal , the rare-earth metal has an oxidation state of +3 and the dopant metal has an oxidation state of +3.

12 . A light emitting device comprising the material of claim 1 .