Method for producing an illumination device and illumination device
A method for producing an illumination device may include providing a plurality of optoelectronic semi-conductor components that each have a semi-conductor layer sequence for generating radiation where the semiconductor components each have at least one contact surface on one side and are held by a common carrier. The method may further include electroplating each contact surface of the semi-conductor components using a solder material, applying the semi-conductor components having the solder material to a substrate, and melting and soldering the contact surfaces onto the surfaces.
1. A method for providing an illumination device, comprising:
providing a plurality of optoelectronic semiconductor components comprising a semiconductor layer sequence for producing radiation, wherein the semiconductor components comprise at least one contact area on a side and are held by a common carrier;
galvanically coating the respective contact area of the semiconductor components with a soldering material;
applying the semiconductor components onto a substrate with the soldering material;
melting the soldering material; and
soldering the contact areas onto the substrate.
2. The method as claimed in claim 1 , further comprising:
applying an adhesive onto the soldering material before melting, and to secure the semiconductor components on the substrate.
3. The method as claimed in claim 2 , further comprising:
evaporating the adhesive before the melting of the soldering material.
4. The method as claimed in claim 3 , further comprising:
evaporating the adhesive at a first temperature; and
melting the soldering material at a second temperature, wherein the first temperature is lower than the second temperature.
5. The method as claimed in claim 1 , further comprising:
introducing the substrate together with the applied semiconductor components into a soldering chamber before the melting of the soldering material; and
introducing a gaseous flux into the soldering chamber before the melting of the soldering material.
6. The method as claimed in claim 5 , wherein nitrogen enriched with formic acid is introduced as the gaseous flux.
7. The method as claimed in claim 1 , further comprising:
producing a vacuum in the soldering chamber during the melting of the soldering material.
8. The method as claimed in claim 1 , wherein the soldering material comprises tin.
9. The method as claimed in claim 1 , further comprising:
coating the respective contact areas with the soldering material with a thickness of 2 to 20 μm.
10. The method as claimed in claim 1 , further comprising:
slightly melting the soldering material before applying the semiconductor components onto the substrate; and
reshaping the outer shape of the soldering material.
11. The method as claimed in claim 1 , further comprising:
providing the substrate with metallic substrate contact areas;
applying the semiconductor components with the soldering material onto the metallic substrate contact areas;
heating the metallic substrate contact areas such that the soldering material and the metallic substrate contact areas form an intermetallic bond; and
soldering the contact areas onto the substrate.
12. The method as claimed in claim 11 , wherein:
the metallic substrate contact areas comprise copper and/or nickel gold.
13. The method as claimed in claim 11 , further comprising:
heating the substrate contact areas and melting the soldering material using pressure.
14. The method as claimed in claim 1 , wherein:
the common carrier comprises a plastics frame.