IP Library Granted Patent US 11,217,635
Granted Patent B2
US 11,217,635 · App. 16/605,253 · Granted Jan 4, 2022

Imaging display device and electronic device

Inventors: Takayuki Ikeda (Kanagawa, JP); Naoto Kusumoto (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/3227G06N3/02H04N7/144H01L27/1225H01L27/14612
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Quick Facts
Patent No.
US 11,217,635
App. No.
16/605,253
Granted
Jan 4, 2022
Kind
B2
Abstract

An imaging display device which can quickly display a captured image is provided. The imaging display device includes an imaging portion on a first surface and a display portion on a second surface that is opposite to the first surface. The imaging portion includes a photoelectric conversion element configured to receive light delivered to the first surface. The display portion includes a light-emitting element configured to emit light in a direction opposite to the first surface. A pixel in the imaging portion is electrically connected to a pixel in the display portion. An image signal obtained at the imaging portion can be directly input to the display portion. Accordingly, the time delay due to data conversion can be eliminated, so that a captured image can be displayed in a moment.

Claims (58)

1. An imaging display device comprising:

an imaging portion on a first surface; and

a display portion on a second surface, the second surface being opposite to the first surface,

wherein the imaging portion comprises a photoelectric conversion element configured to receive light delivered to the first surface,

wherein the display portion comprises a light-emitting element configured to emit light in a direction opposite to the first surface,

wherein the photoelectric conversion element is electrically connected to a gate of a transistor, and

wherein the light-emitting element is electrically connected to one of a source and a drain of the transistor.

2. The imaging display device according to claim 1 , further comprising:

a data processing portion,

wherein the data processing portion comprises a neural network configured to estimate the kind of an object.

3. The imaging display device according to claim 2 ,

wherein the data processing portion is positioned between the photoelectric conversion element and the light-emitting element.

4. An electronic device comprising:

the imaging display device according to claim 1 ; and

a lens.

5. An imaging display device comprising:

a first layer;

a second layer; and

a third layer,

wherein the second layer is between the first layer and the third layer,

wherein the first layer comprises a light-emitting element,

wherein the second layer comprises a first transistor and a second transistor,

wherein the third layer comprises a photoelectric conversion element,

wherein the light-emitting element is electrically connected to one of a source and a drain of the first transistor,

wherein the photoelectric conversion element is electrically connected to one of a source and a drain of the second transistor, and

wherein a gate of the first transistor is electrically connected to the other of the source and the drain of the second transistor.

6. The imaging display device according to claim 5 , further comprising:

a fourth layer,

wherein the fourth layer is between the second layer and the third layer,

wherein the fourth layer comprises a third transistor,

wherein the third transistor is electrically connected to the second transistor,

wherein each of the first transistor and the second transistor comprises a metal oxide in a channel formation region, and

wherein the third transistor comprises silicon in a channel formation region.

7. The imaging display device according to claim 6 ,

wherein the metal oxide comprises In, Zn, and M, and

wherein M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.

8. The imaging display device according to claim 5 ,

wherein the photoelectric conversion element comprises selenium or a compound comprising selenium.

9. An electronic device comprising:

the imaging display device according to claim 5 ; and

a lens.

10. An imaging display device comprising:

a first transistor;

a second transistor;

a third transistor;

a photoelectric conversion element; and

a light-emitting element,

wherein one electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor,

wherein the one electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the second transistor,

wherein a gate of the third transistor is electrically connected to the other of the source and the drain of the second transistor, and

wherein one electrode of the light-emitting element is electrically connected to one of a source and a drain of the third transistor.

11. The imaging display device according to claim 10 , further comprising:

a fourth transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to the gate of the third transistor.

12. An electronic device comprising:

the imaging display device according to claim 10 ; and

a lens.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2019
From: IKEDA, TAKAYUKI; KUSUMOTO, NAOTO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 050714/0388 →
Priority Claims (1)
JP JP2017-090230 · Apr 28, 2017 · national
Continuity (1)
Related Publication 20200127064A1 · Apr 23, 2020
Cited By (1)
US 12,720,958