Nanophotonic hot-electron devices for infrared light detection
Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.
1. A metal-insulator-conductor infrared photodetector comprising:
a metallic infrared light absorber layer of thickness no more than one hundred nanometers configured to generate electrons with a first kinetic energy upon absorption of photons of the infrared light;
a layer of dielectric material of thickness between one-third and fifty nanometers configured to allow passage of electrons having the first kinetic energy while blocking electrons having a second kinetic energy;
a conductive substrate; and
a periodic or quasi-periodic structure comprising a grating having thickness between ten and three hundred nanometers disposed on the metallic infrared light absorber layer, wherein the metallic infrared light absorber layer is disposed on the layer of dielectric material, the layer of dielectric material being disposed on the conductive substrate.
2. The metal-insulator-conductor infrared photodetector of claim 1 wherein the metallic infrared light absorber layer comprises a metal.
3. The metal-insulator-conductor infrared photodetector of claim 1 wherein the metallic infrared light absorber layer comprises metal silicide.
4. The metal-insulator-conductor infrared photodetector of claim 1 wherein the metallic infrared light absorber layer comprises graphene.
5. The metal-insulator-conductor infrared photodetector of claim 1 wherein the periodic or quasi-periodic structure further comprises dots or a self-assembled structure having typical shape diameters between 50 and 2500 nanometers.
6. The metal-insulator-conductor infrared photodetector of claim 5 wherein the dots or self-assembled structures have typical shape diameters between 100 and 2000 nanometers.
7. A metal-insulator-conductor infrared photodetector comprising:
a metallic infrared light absorber layer of thickness no more than one hundred nanometers configured to generate electrons with a first kinetic energy upon absorption of photons of the infrared light;
a layer of dielectric material of thickness between one-third and fifty nanometers configured to allow passage of electrons having the first kinetic energy while blocking electrons having a second kinetic energy;
a conductive substrate;
a periodic or quasi-periodic structures having thickness between ten and three hundred nanometers disposed on the metallic infrared light absorber layer;
wherein the metallic infrared light absorber layer is disposed on the layer of dielectric material, the layer of dielectric material being disposed on the conductive substrate;
wherein the periodic or quasi-periodic structure comprises a grating having pitch between 100 and 2000 nanometers.
8. A method of fabricating a metallic nanostructure for optical absorption enhancement comprising:
depositing a metallic layer;
performing lithography to define shapes having relatively larger feature sizes and periods; and
depositing self-assembled metallic structures with periods and sizes smaller than the lithography features.