Die back side structures for warpage control
A foundation layer having a stiffener and methods of forming a stiffener are described. One or more dies are formed over the foundation layer. Each die has a front side surface that is electrically coupled to the foundation layer and a back side surface that is opposite from the front side surface. A stiffening layer (or a stiffener) is formed on the back side surface of at least one of the dies. The stiffening layer may be directly coupled to the back side surface of the one or more dies without an adhesive layer. The stiffening layer may include one or more materials, including at least one of a metal, a metal alloy, and a ceramic. The stiffening layer may be formed to reduce warpage based on the foundation layer and the dies. The one or more materials of the stiffening layer can be formed using a cold spray.
1. A device package, comprising:
a foundation layer having a die disposed on the foundation layer, wherein the die has a front side surface that is electrically coupled to the foundation layer and a back side surface that is opposite from the front side surface; and
a stiffening layer formed on the back side surface of the die, wherein the stiffening layer has an I-shape.
2. The device package of claim 1 , wherein the stiffening layer is directly coupled to the back side surface of the die without an adhesive layer.
3. The device package of claim 1 , wherein the stiffening layer includes one or more materials, and wherein the one or more materials include at least one of a metal, a metal alloy, and a ceramic.
4. The device package of claim 1 , further comprising a motherboard formed below the foundation layer, wherein the motherboard is electrically coupled to the foundation layer.
5. The device package of claim 1 , wherein the stiffening layer is formed to reduce warpage based on the foundation layer and the die.
6. The device package of claim 3 , wherein the one or more materials of the stiffening layer are formed on the back side of the die using a cold spray process.
7. The device package of claim 1 , wherein the stiffening layer is formed using one or more patterns.
8. The device package of claim 1 , further comprising an underfill layer formed between the die and the foundation layer.
9. The device package of claim 1 , wherein the stiffening layer is formed on the die at a wafer level or a panel level.
10. The device package of claim 1 , wherein the foundation layer is a printed circuit board.
11. A method of forming a device package, the method comprising:
disposing a die on a foundation layer, wherein the die has a front side surface that is electrically coupled to the foundation layer and a back side surface that is opposite from the front side surface; and
forming a stiffening layer on the back side surface of the die, wherein the stiffening layer has an I-shape.
12. The method of claim 11 , wherein the stiffening layer is directly coupled to the back side surface of the die without an adhesive layer.
13. The method of claim 11 , wherein the stiffening layer includes one or more materials, and wherein the one or more materials include at least one of a metal, a metal alloy, and a ceramic.
14. The method of claim 11 , further comprising forming a motherboard below the foundation layer, wherein the motherboard is electrically coupled to the foundation layer.
15. The method of claim 11 , wherein the stiffening layer is formed to reduce warpage based on the foundation layer and the die.
16. The method of claim 13 , wherein the one or more materials of the stiffening layer are formed on the back side of the die using a cold spray process.
17. The method of claim 11 , wherein the stiffening layer is formed using one or more patterns.
18. The method of claim 11 , further comprising forming an underfill layer between the die and the foundation layer.
19. The method of claim 11 , wherein the stiffening layer is formed on the die at a wafer level or a panel level.
20. The method of claim 11 , wherein the foundation layer is a printed circuit board.