Aluminum nitride-based sintered compact and semiconductor holding device
An aluminum nitride-based sintered compact includes: aluminum nitride crystal particles containing Mg; composite oxide containing a rare earth element and Al, the composite oxide having a garnet crystal structure; and composite oxynitride containing Mg and Al. Particles of the composite oxide and particles of the composite oxynitride are interspersed between the aluminum nitride crystal particles. The composite oxide may include Y. A content of Mg in the aluminum nitride crystal particles may fall in a range of 0.1 mol % or more and 1.0 mol % or less, based on a total of all metal elements contained in the aluminum nitride crystal particles taken as 100 mol %. A semiconductor holding device includes the aluminum nitride-based sintered compact; and an electrostatic adsorptive electrode.
1. An aluminum nitride-based sintered compact, comprising:
aluminum nitride crystal particles comprising Mg;
composite oxide comprising a rare earth element and Al, the composite oxide having a garnet crystal structure; and
composite oxynitride comprising Mg and Al,
the composite oxide and the composite oxynitride being interspersed as particles between the aluminum nitride crystal particles.
2. The aluminum nitride-based sintered compact according to claim 1 ,
wherein the composite oxide comprises Y.
3. The aluminum nitride-based sintered compact according to claim 1 ,
wherein a content of Mg in the aluminum nitride crystal particles falls in a range of 0.1 mol % or more and 1.0 mol % or less, based on a total of all metal elements contained in the aluminum nitride crystal particles taken as 100 mol %.
4. A semiconductor holding device, comprising:
the aluminum nitride-based sintered compact according to claim 1 ; and
an electrostatic adsorptive electrode.